Vacancy-mediated nitrogen diffusion and aggregation via high-fluence electron beam irradiation in HPHT synthesized diamond crystal
Abstract
The negatively charged nitrogen vacancy (NV-) center in diamond is a promising point defect for highly sensitive quantum sensing. The formation of high-density NV- centers is essential for improving sensitivity. We performed room-temperature electron beam irradiation (EBI) and annealing on nitrogen-doped high-pressure high-temperature diamond crystals, aiming to convert all substitutional nitrogen into NV structures by increasing EBI fluence. While the Ns0 to NV0 and NV- conversion process dominated at low EBI fluences, in a high-fluence region, NV0 and NV- center and Ns0 and Ns+ concentrations decreased with increasing EBI fluence, indicating the formation of unknown nitrogen-related defects such as the H3 center, which is a nitrogen and vacancy aggregation defect. Although H3 centers were observed at high EBI fluence, their annealing temperature of 1375 +- 25 °C was lower than the typically reported temperatures over 1600 °C. We attribute this low-temperature formation to vacancy-mediated nitrogen diffusion and aggregation.
Related
- Multiproperty Atomistic Characterization of a Synthesized Pyrazinic Nitrogen-Doped Porous Armchair Graphene Nanoribbon
- Modification of Surface Properties in Ruthenium Thin Films through Nitrogen Ion Irradiation
- Theoretical study of nitrogen-vacancy spin coherence enhanced by vacancy aggregation in diamond using cluster-correlation expansion
- Exact amplitude relations for diffusion-limited aggregation
- A Nonlocal Aggregation–Diffusion Model with Adaptive Perception Kernels for Descriptive Norm Dynamics
BibTeX
@misc{shinei2026vacancymediated,
title = {{Vacancy-mediated nitrogen diffusion and aggregation via high-fluence electron beam irradiation in HPHT synthesized diamond crystal}},
author = {Chikara Shinei and Yuta Masuyama and Jun Chen and Hiroshi. Abe and Masashi Miyakawa and Takashi Taniguchi and Takeshi Ohshima and Tokuyuki Teraji},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2606.27723},
eprint = {2606.27723},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2606.27723},
}
RIS
TY - UNPB
TI - Vacancy-mediated nitrogen diffusion and aggregation via high-fluence electron beam irradiation in HPHT synthesized diamond crystal
AU - Chikara Shinei
AU - Yuta Masuyama
AU - Jun Chen
AU - Hiroshi. Abe
AU - Masashi Miyakawa
AU - Takashi Taniguchi
AU - Takeshi Ohshima
AU - Tokuyuki Teraji
PY - 2026
DA - 2026/09/24
PB - arXiv
DO - 10.48550/arxiv.2606.27723
UR - https://arxiv.org/abs/2606.27723
AB - The negatively charged nitrogen vacancy (NV-) center in diamond is a promising point defect for highly sensitive quantum sensing. The formation of high-density NV- centers is essential for improving sensitivity. We performed room-temperature electron beam irradiation (EBI) and annealing on nitrogen-doped high-pressure high-temperature diamond crystals, aiming to convert all substitutional nitrogen into NV structures by increasing EBI fluence. While the Ns0 to NV0 and NV- conversion process dominated at low EBI fluences, in a high-fluence region, NV0 and NV- center and Ns0 and Ns+ concentrations decreased with increasing EBI fluence, indicating the formation of unknown nitrogen-related defects such as the H3 center, which is a nitrogen and vacancy aggregation defect. Although H3 centers were observed at high EBI fluence, their annealing temperature of 1375 +- 25 °C was lower than the typically reported temperatures over 1600 °C. We attribute this low-temperature formation to vacancy-mediated nitrogen diffusion and aggregation.
ER -