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Peer-reviewedCC BY 4.0Nanomaterials

Interface-Induced Magnetization Reversal and Multistate Magnetoresistance in Fe3GaTe2/Ni80Fe20 Heterostructure

  • Guangcheng Wang1
  • Lin Ma2
  • Shuo Xu3,4
  • Jihui Li1
  • Meiyin Yang3,4
  • Zijing Zhao1
  • Xiaolei Wang1
4 affiliations
  1. 1School of Physics and Optoelectronic Engineering, Beijing University of Technology, Beijing 100124, China
  2. 2Key Laboratory of Advanced Functional Materials, Ministry of Education, College of Materials Science and Engineering, Beijing University of Technology, Beijing 100124, China
  3. 3Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences, Beijing 100029, China
  4. 4Institute of Microelectronics of the Chinese Academy of Sciences, Beijing 100029, China
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Abstract

Mixed-dimensional heterostructures integrating two-dimensional (2D) van der Waals magnets with conventional ferromagnetic films unify the versatile functionalities of both material classes and offer enormous potential for magnetic sensing, non-volatile data storage, and reconfigurable spintronic devices. More importantly, 2D domain evolution can modulate the magnetization reversal and magnetotransport of the adjacent ferromagnetic layer through interface engineering. Here, we construct a vertically stacked Fe3GaTe2/Ni80Fe20 (Permalloy, Py) heterostructure. Magnetometry measurements confirm the magnetic anisotropies of both constituents and labyrinthine domains in Fe3GaTe2. Compared with the narrow, one-step low-field anisotropic magnetoresistance features of isolated Py, the heterostructure exhibits multipeak resistance responses and pronounced hysteresis. Asymmetric minor-loop field-sweeping measurements further reveal a strong dependence on the positive maximum field, which modifies the loop morphology and produces distinct remanent resistance states at zero field. These observations are consistent with a domain-mediated interfacial pinning mechanism, in which Fe3GaTe2 domains and domain walls modify the interfacial magnetic environment, thereby pinning adjacent Py moments and promoting their progressive, multistep reversal. These findings provide a route toward multistate spintronic devices based on mixed-dimensional magnetic heterostructures.

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Cite

BibTeXRIS
BibTeX
@article{wang2026interfaceinduced,
  title = {{Interface-Induced Magnetization Reversal and Multistate Magnetoresistance in Fe3GaTe2/Ni80Fe20 Heterostructure}},
  author = {Guangcheng Wang and Lin Ma and Shuo Xu and Jihui Li and Meiyin Yang and Zijing Zhao and Xiaolei Wang},
  journal = {Nanomaterials},
  year = {2026},
  month = oct,
  doi = {10.3390/nano16201304},
  url = {https://www.mdpi.com/2079-4991/16/20/1304},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Interface-Induced Magnetization Reversal and Multistate Magnetoresistance in Fe3GaTe2/Ni80Fe20 Heterostructure
AU  - Guangcheng Wang
AU  - Lin Ma
AU  - Shuo Xu
AU  - Jihui Li
AU  - Meiyin Yang
AU  - Zijing Zhao
AU  - Xiaolei Wang
PY  - 2026
DA  - 2026/10/01
JO  - Nanomaterials
DO  - 10.3390/nano16201304
UR  - https://www.mdpi.com/2079-4991/16/20/1304
AB  - Mixed-dimensional heterostructures integrating two-dimensional (2D) van der Waals magnets with conventional ferromagnetic films unify the versatile functionalities of both material classes and offer enormous potential for magnetic sensing, non-volatile data storage, and reconfigurable spintronic devices. More importantly, 2D domain evolution can modulate the magnetization reversal and magnetotransport of the adjacent ferromagnetic layer through interface engineering. Here, we construct a vertically stacked Fe3GaTe2/Ni80Fe20 (Permalloy, Py) heterostructure. Magnetometry measurements confirm the magnetic anisotropies of both constituents and labyrinthine domains in Fe3GaTe2. Compared with the narrow, one-step low-field anisotropic magnetoresistance features of isolated Py, the heterostructure exhibits multipeak resistance responses and pronounced hysteresis. Asymmetric minor-loop field-sweeping measurements further reveal a strong dependence on the positive maximum field, which modifies the loop morphology and produces distinct remanent resistance states at zero field. These observations are consistent with a domain-mediated interfacial pinning mechanism, in which Fe3GaTe2 domains and domain walls modify the interfacial magnetic environment, thereby pinning adjacent Py moments and promoting their progressive, multistep reversal. These findings provide a route toward multistate spintronic devices based on mixed-dimensional magnetic heterostructures.
SN  - 2079-4991
ER  -