Spectrally Programmable Spin‐Polarized Photocurrents in WSe2–NiPS3 Magnetic van der Waals Heterostructures
6 affiliations
- 1Faculty of Engineering Institute for Nanotechnology and Advanced Materials Bar‐Ilan University Ramat‐Gan Israel
- 2Schulich Faculty of Chemistry Solid State Institute Russell Berrie Nanotechnology Institute Helen Diller Quantum Information Center Technion Haifa Israel
- 3Eduard Zintl Institute of Inorganic and Physical Chemistry Technical University of Darmstadt Darmstadt Germany
- 4Faculty of Chemistry and Food Chemistry Technische Universität Dresden Dresden Germany
- 5Center For Advanced Systems Understanding CASUS HZDR Görlitz Germany
- 6Department of Chemistry and ibs for Nanomedicine Yonsei University Seoul Republic of Korea
Abstract
Efficient generation and control of spin‐polarized currents in semiconductors remain central challenges for spin‐based electronics, particularly due to impedance mismatch and the reliance on magnetic fields or ferromagnetic contacts. Here, we introduce a materials platform for spectrally programmable spin transport based on a van der Waals (vdW) heterostructure combining the antiferromagnetic semiconductor NiPS3 with WSe2. In a p–n diode architecture, circularly polarized excitation produces pronounced photoconductive resonances with spin‐polarization reaching 80% near the Néel temperature and persisting at ≈30% at room temperature. Remarkably, selected spectral bands retain their polarization sign across the magnetic phase transition, evidencing robust, spectrally protected spin‐polarized current generation. Polarization‐resolved photogalvanic measurements reveal a dominant circular injection‐current mechanism, confirming spin‐polarized carrier transport. First‐principles calculations show that an applied electric field induces interfacial hybridization and spin‐layer locking, giving rise to localized symmetry breaking and enhanced optical absorption while preserving global time‐reversal symmetry. These results establish spectral tuning of excitation as a new control knob for spin transport, enabling spin‐current generation without magnetic fields or polarization switching. Our findings position magnetic vdW heterostructures as a versatile platform for opto‐spintronic functionality and spectrally programmable spintronic devices.
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BibTeX
@article{yadav2026spectrally,
title = {{Spectrally Programmable Spin‐Polarized Photocurrents in WSe2–NiPS3 Magnetic van der Waals Heterostructures}},
author = {Rajesh Kumar Yadav and Michal Poplinger and Adi Levi and Adi Harchol and Nirman Chakraborty and Thomas Brumme and Thomas Heine and Efrat Lifshitz and Doron Naveh},
journal = {Advanced Materials (Deerfield Beach, Fla.)},
year = {2026},
month = sep,
doi = {10.1002/adma.74889},
url = {https://doi.org/10.1002/adma.74889},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - JOUR
TI - Spectrally Programmable Spin‐Polarized Photocurrents in WSe2–NiPS3 Magnetic van der Waals Heterostructures
AU - Rajesh Kumar Yadav
AU - Michal Poplinger
AU - Adi Levi
AU - Adi Harchol
AU - Nirman Chakraborty
AU - Thomas Brumme
AU - Thomas Heine
AU - Efrat Lifshitz
AU - Doron Naveh
PY - 2026
DA - 2026/09/02
JO - Advanced Materials (Deerfield Beach, Fla.)
DO - 10.1002/adma.74889
UR - https://doi.org/10.1002/adma.74889
AB - Efficient generation and control of spin‐polarized currents in semiconductors remain central challenges for spin‐based electronics, particularly due to impedance mismatch and the reliance on magnetic fields or ferromagnetic contacts. Here, we introduce a materials platform for spectrally programmable spin transport based on a van der Waals (vdW) heterostructure combining the antiferromagnetic semiconductor NiPS3 with WSe2. In a p–n diode architecture, circularly polarized excitation produces pronounced photoconductive resonances with spin‐polarization reaching 80% near the Néel temperature and persisting at ≈30% at room temperature. Remarkably, selected spectral bands retain their polarization sign across the magnetic phase transition, evidencing robust, spectrally protected spin‐polarized current generation. Polarization‐resolved photogalvanic measurements reveal a dominant circular injection‐current mechanism, confirming spin‐polarized carrier transport. First‐principles calculations show that an applied electric field induces interfacial hybridization and spin‐layer locking, giving rise to localized symmetry breaking and enhanced optical absorption while preserving global time‐reversal symmetry. These results establish spectral tuning of excitation as a new control knob for spin transport, enabling spin‐current generation without magnetic fields or polarization switching. Our findings position magnetic vdW heterostructures as a versatile platform for opto‐spintronic functionality and spectrally programmable spintronic devices.
SN - 0935-9648
SN - 1521-4095
ER -