Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization
Abstract
Due to strong spin-orbit coupling, large Landé g-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platform for the exploration of topological superconductivity in hybrid semiconductor-superconductor heterostructures. Reduction of disorder in the semiconductor remains a primary challenge to the disambiguation of subtle interaction effects. Here we demonstrate very high mobility InAs 2DEGs grown on insulating InP substrates. Utilizing a convex compositional grading profile in an InAlAs metamorphic buffer we demonstrate InAs quantum wells with thickness greater than 10 nm without need of Ga-containing cladding layers. We examine structural and electrical transport properties of these heterostructures. Advances in the design of the metamorphic InAlAs buffer result in low-temperature electron mobility exceeding 1.7×106 cm2 V−1 s−1 at 2DEG density ≤3.2×1011 cm−2, the highest value yet reported for this material system.
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BibTeX
@misc{lindemann2026realization,
title = {{Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization}},
author = {Tyler Lindemann and Rojila Ghimire and Alejandro Alcaraz Ramirez and Ahmad Azizimanesh and Sergei Gronin and Ray Kallaher and Michael J. Manfra},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.28795},
eprint = {2609.28795},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.28795},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Realization of Very High Mobility InAs Quantum Wells on InP Substrates Through Convex InAlAs Graded Buffer Optimization
AU - Tyler Lindemann
AU - Rojila Ghimire
AU - Alejandro Alcaraz Ramirez
AU - Ahmad Azizimanesh
AU - Sergei Gronin
AU - Ray Kallaher
AU - Michael J. Manfra
PY - 2026
DA - 2026/09/23
PB - arXiv
DO - 10.48550/arxiv.2609.28795
UR - https://arxiv.org/abs/2609.28795
AB - Due to strong spin-orbit coupling, large Landé g-factor, and a highly transparent interface, the two-dimensional electron gas (2DEG) in InAs quantum wells provides an ideal platform for the exploration of topological superconductivity in hybrid semiconductor-superconductor heterostructures. Reduction of disorder in the semiconductor remains a primary challenge to the disambiguation of subtle interaction effects. Here we demonstrate very high mobility InAs 2DEGs grown on insulating InP substrates. Utilizing a convex compositional grading profile in an InAlAs metamorphic buffer we demonstrate InAs quantum wells with thickness greater than 10 nm without need of Ga-containing cladding layers. We examine structural and electrical transport properties of these heterostructures. Advances in the design of the metamorphic InAlAs buffer result in low-temperature electron mobility exceeding 1.7×10^6 cm^2 V^−1 s^−1 at 2DEG density ≤3.2×10^11 cm^−2, the highest value yet reported for this material system.
ER -