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PreprintarXiv licencearXiv

Coulomb-Driven Electronic Textures in Lightly Hole-Doped Cuprates

  • Wei-Wei Yang
  • Yang Shen
  • Yuxin Wang
  • Pengfei Li
  • Mingpu Qin
  • Kun Jiang
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Abstract

Motivated by recent experiments on Ca2CuO2Cl2, we present a comprehensive study of the interplay between dopants and localized Zhang-Rice singlets in lightly hole-doped cuprates. Owing to the poorly screened Coulomb potential, the interactions between dopants and localized Zhang-Rice singlets favor asymmetric electronic configurations characterized by effective electric "dipoles". Using the MPS-based Lanczos method, we show that these localized holes give rise to in-gap bound states within the charge-transfer gap. When tunneling matrix-element effects are included, the bound states exhibit a characteristic 4a0 × 2a0 internal structure, consistent with experimental observations. Our results suggest that Coulomb interactions between dopants and localized Zhang-Rice singlets, together with tunneling matrix-element effects, provide a microscopic mechanism for the observed 4a0 electronic structures.

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Cite

BibTeXRIS
BibTeX
@misc{yang2026coulombdriven,
  title = {{Coulomb-Driven Electronic Textures in Lightly Hole-Doped Cuprates}},
  author = {Wei-Wei Yang and Yang Shen and Yuxin Wang and Pengfei Li and Mingpu Qin and Kun Jiang},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.30766},
  eprint = {2610.30766},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.30766},
}
RIS
TY  - UNPB
TI  - Coulomb-Driven Electronic Textures in Lightly Hole-Doped Cuprates
AU  - Wei-Wei Yang
AU  - Yang Shen
AU  - Yuxin Wang
AU  - Pengfei Li
AU  - Mingpu Qin
AU  - Kun Jiang
PY  - 2026
DA  - 2026/10/22
PB  - arXiv
DO  - 10.48550/arxiv.2610.30766
UR  - https://arxiv.org/abs/2610.30766
AB  - Motivated by recent experiments on Ca_2CuO_2Cl_2, we present a comprehensive study of the interplay between dopants and localized Zhang-Rice singlets in lightly hole-doped cuprates. Owing to the poorly screened Coulomb potential, the interactions between dopants and localized Zhang-Rice singlets favor asymmetric electronic configurations characterized by effective electric "dipoles". Using the MPS-based Lanczos method, we show that these localized holes give rise to in-gap bound states within the charge-transfer gap. When tunneling matrix-element effects are included, the bound states exhibit a characteristic 4a_0 × 2a_0 internal structure, consistent with experimental observations. Our results suggest that Coulomb interactions between dopants and localized Zhang-Rice singlets, together with tunneling matrix-element effects, provide a microscopic mechanism for the observed 4a_0 electronic structures.
ER  -