Anomalous Transverse Thomson Effect
Abstract
We formulate the anomalous transverse Thomson effect (ATTE), the long-missing Thomson counterpart of the anomalous Hall and anomalous Nernst effects. Its coefficient is not unique but depends on the electrical boundary condition: τATTE(j), defined for a spatially uniform imposed current density, and τATTE(E), defined for equipotential electrodes. Both are fully determined by the total anomalous Nernst coefficient (ANC) and its temperature dependence, while τATTE(E) acquires an additional contribution from the temperature dependence of the longitudinal resistivity. This relation is model independent within local linear response and applies to the total ANC regardless of whether its microscopic origin is intrinsic or extrinsic. Using a massive Dirac model for Fe3Sn2, we show that Berry curvature near the gapped Dirac cones enhances the ANC-related contributions to τATTE(E). In the low-temperature limit, both τATTE(j)/SxyA and τATTE(E)/SxyA approach a value of three. We further extract τATTE(E) from reported experimental data for CoS2, Co3Sn2S2 and CeCrGe3; for CeCrGe3 it reaches approximately -20 μV/K, and we estimate the maximum achievable cold-side heat current density to assess its cooling potential. Because the ATTE can be evaluated directly from existing ANC and longitudinal resistivity data, it is readily testable without additional equipment or measurements.
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BibTeX
@misc{zhang2026anomalous,
title = {{Anomalous Transverse Thomson Effect}},
author = {Ying-Fei Zhang and Zhi-Fan Zhang and Zhen-Gang Zhu and Gang Su},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2605.06299},
eprint = {2605.06299},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2605.06299},
}
RIS
TY - UNPB
TI - Anomalous Transverse Thomson Effect
AU - Ying-Fei Zhang
AU - Zhi-Fan Zhang
AU - Zhen-Gang Zhu
AU - Gang Su
PY - 2026
DA - 2026/10/09
PB - arXiv
DO - 10.48550/arxiv.2605.06299
UR - https://arxiv.org/abs/2605.06299
AB - We formulate the anomalous transverse Thomson effect (ATTE), the long-missing Thomson counterpart of the anomalous Hall and anomalous Nernst effects. Its coefficient is not unique but depends on the electrical boundary condition: τ_ATTE^(j), defined for a spatially uniform imposed current density, and τ_ATTE^(E), defined for equipotential electrodes. Both are fully determined by the total anomalous Nernst coefficient (ANC) and its temperature dependence, while τ_ATTE^(E) acquires an additional contribution from the temperature dependence of the longitudinal resistivity. This relation is model independent within local linear response and applies to the total ANC regardless of whether its microscopic origin is intrinsic or extrinsic. Using a massive Dirac model for Fe_3Sn_2, we show that Berry curvature near the gapped Dirac cones enhances the ANC-related contributions to τ_ATTE^(E). In the low-temperature limit, both τ_ATTE^(j)/S_xy^A and τ_ATTE^(E)/S_xy^A approach a value of three. We further extract τ_ATTE^(E) from reported experimental data for CoS_2, Co_3Sn_2S_2 and CeCrGe_3; for CeCrGe_3 it reaches approximately -20 μV/K, and we estimate the maximum achievable cold-side heat current density to assess its cooling potential. Because the ATTE can be evaluated directly from existing ANC and longitudinal resistivity data, it is readily testable without additional equipment or measurements.
ER -