Three-Dimensional Fermiology and Thickness-Tuned Magnetotransport in Single-Crystalline Antimony Flakes
Abstract
The extreme magnetoresistance of compensated semimetals is governed by both the Fermi-surface geometry and carrier relaxation, but these contributions are difficult to disentangle in finite-size structures. Here, we combine longitudinal and Hall magnetotransport measurements with temperature- and angle-dependent Shubnikov--de Haas oscillations in single-crystalline Sb flakes grown by chemical vapor deposition (CVD), with thicknesses ranging from 110 to 783 nm. As thickness increases, the non-saturating MR at 2 K and 14 T rises nearly 30-fold, reaching 7.13×105%, while the primary frequency Fα remains approximately 99 T without any systematic shift. A joint three-channel analysis of ρxx(B) and ρxy(B) reveals that this evolution is driven by an increase in the mobility of a nearly compensated electron--hole pair, rather than by a reconstruction of the primary pockets. Angle-dependent measurements confirm the existence of a closed three-dimensional α pocket, and a reproducible high-frequency sector (335-377 T) is consistent with the electron β orbit of the L-point pockets in bulk Sb. Together, the transport and quantum-oscillation results show that thickness tunes extreme MR through dimension-dependent scattering while preserving bulk-like fermiology.
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BibTeX
@misc{gaponov2026threedimensional,
title = {{Three-Dimensional Fermiology and Thickness-Tuned Magnetotransport in Single-Crystalline Antimony Flakes}},
author = {Mikhail Gaponov and Jicheng Wang and Liang Zha and Rui Wu},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.06561},
eprint = {2609.06561},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.06561},
}
RIS
TY - UNPB
TI - Three-Dimensional Fermiology and Thickness-Tuned Magnetotransport in Single-Crystalline Antimony Flakes
AU - Mikhail Gaponov
AU - Jicheng Wang
AU - Liang Zha
AU - Rui Wu
PY - 2026
DA - 2026/09/06
PB - arXiv
DO - 10.48550/arxiv.2609.06561
UR - https://arxiv.org/abs/2609.06561
AB - The extreme magnetoresistance of compensated semimetals is governed by both the Fermi-surface geometry and carrier relaxation, but these contributions are difficult to disentangle in finite-size structures. Here, we combine longitudinal and Hall magnetotransport measurements with temperature- and angle-dependent Shubnikov--de Haas oscillations in single-crystalline Sb flakes grown by chemical vapor deposition (CVD), with thicknesses ranging from 110 to 783 nm. As thickness increases, the non-saturating MR at 2 K and 14 T rises nearly 30-fold, reaching 7.13×10^5%, while the primary frequency F_α remains approximately 99 T without any systematic shift. A joint three-channel analysis of ρ_xx(B) and ρ_xy(B) reveals that this evolution is driven by an increase in the mobility of a nearly compensated electron--hole pair, rather than by a reconstruction of the primary pockets. Angle-dependent measurements confirm the existence of a closed three-dimensional α pocket, and a reproducible high-frequency sector (335-377 T) is consistent with the electron β orbit of the L-point pockets in bulk Sb. Together, the transport and quantum-oscillation results show that thickness tunes extreme MR through dimension-dependent scattering while preserving bulk-like fermiology.
ER -