Ultrafast dual-band all-optical logic gate design using CMOS compatible alternative plasmonic materials with IMI geometry and nanoring resonators
- 1Nanotechnology, AI, IoT and Applied Machine Learning Research Group (Nano-Bio-AI), Department of Electrical and Electronic Engineering, BRAC University Dhaka Bangladesh
Abstract
The accelerating demand for ultrafast, scalable, energy-efficient and miniaturized computing has exposed the physical limits of conventional CMOS electronics, prompting the transition toward optical and plasmonic architectures. Existing metallic (plasmonic) nanoparticles primarily gold and silver suffer from high losses, thermal instability, and incompatibility with CMOS fabrication, constraining large scale integration. To address this gap, we propose a dual band, CMOS compatible material platform, Insulator-Metal-Insulator (IMI) nanostructure leveraging alternative plasmonic materials – Indium Tin Oxide (ITO) and the dielectric Silicon Nitride (Si3N4) for ultrafast all-optical logic gate (AOLG) realization. The designed hybrid IMI waveguide-nanoring resonator demonstrates high transmission efficiency of 86.15% (λ = 1173.8 nm) & 80.69% (λ = 2054.7 nm) at two optical bands and low insertion losses. The compact (400 × 400 nm2) footprint supports all seven fundamental logic operations (NOT, AND, OR, NAND, NOR, XOR, XNOR) within a single architecture. Quantitative analysis reveals an extinction ratio exceeding 18 dB and ultrafast femtosecond response times, demonstrating competitive simulated optical performance subject to experimental validation. This CMOS compatible dual band architecture demonstrates a promising route toward energy efficient photonic integrated circuits (PICs) and opto-electronic integrated circuits (OEICs), enabling the next generation of AI driven, neuromorphic, and high-speed optical computing platforms.
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BibTeX
@article{fahim2026ultrafast,
title = {{Ultrafast dual-band all-optical logic gate design using CMOS compatible alternative plasmonic materials with IMI geometry and nanoring resonators}},
author = {Md. Faiyaz Abrar Fahim and Abu S. M. Mohsin and Mohammed Belal Hossain Bhuian and Md Mosaddequr Rahman},
journal = {Nanoscale advances},
year = {2026},
month = oct,
doi = {10.1039/d6na00920d},
url = {https://europepmc.org/article/PMC/PMC13720989},
note = {CC BY-NC},
}
RIS
TY - JOUR
TI - Ultrafast dual-band all-optical logic gate design using CMOS compatible alternative plasmonic materials with IMI geometry and nanoring resonators
AU - Md. Faiyaz Abrar Fahim
AU - Abu S. M. Mohsin
AU - Mohammed Belal Hossain Bhuian
AU - Md Mosaddequr Rahman
PY - 2026
DA - 2026/10/30
JO - Nanoscale advances
DO - 10.1039/d6na00920d
UR - https://europepmc.org/article/PMC/PMC13720989
AB - The accelerating demand for ultrafast, scalable, energy-efficient and miniaturized computing has exposed the physical limits of conventional CMOS electronics, prompting the transition toward optical and plasmonic architectures. Existing metallic (plasmonic) nanoparticles primarily gold and silver suffer from high losses, thermal instability, and incompatibility with CMOS fabrication, constraining large scale integration. To address this gap, we propose a dual band, CMOS compatible material platform, Insulator-Metal-Insulator (IMI) nanostructure leveraging alternative plasmonic materials – Indium Tin Oxide (ITO) and the dielectric Silicon Nitride (Si3N4) for ultrafast all-optical logic gate (AOLG) realization. The designed hybrid IMI waveguide-nanoring resonator demonstrates high transmission efficiency of 86.15% (λ = 1173.8 nm) & 80.69% (λ = 2054.7 nm) at two optical bands and low insertion losses. The compact (400 × 400 nm2) footprint supports all seven fundamental logic operations (NOT, AND, OR, NAND, NOR, XOR, XNOR) within a single architecture. Quantitative analysis reveals an extinction ratio exceeding 18 dB and ultrafast femtosecond response times, demonstrating competitive simulated optical performance subject to experimental validation. This CMOS compatible dual band architecture demonstrates a promising route toward energy efficient photonic integrated circuits (PICs) and opto-electronic integrated circuits (OEICs), enabling the next generation of AI driven, neuromorphic, and high-speed optical computing platforms.
SN - 2516-0230
ER -