A study of distortions and related electrical activity in dislocated Si-Cz ingots

Abstract

This work aims at contributing to increase the understanding of crystal defects and their induced distortions in dislocated silicon Czochralski ingots. A popped-out ingot (PO), which experienced a premature detachment from the melt during the tail pulling step and an ingot with grown-in dislocations (GID), were studied. In each ingot, two wafers, cut at different heights, were characterized by photoluminescence (PL) mapping and Rocking Curve Imaging (RCI). Distortions and misorientations between crystal domains were quantified on large surface areas (up to one fourth) on the wafers. Dislocation densities in the order of a few 10 5 cm -2 were estimated in both ingots. In PO wafers, slip bands were found to be the main distortion structure. Additionally, round-shaped dislocation cells of 100 -300 μm in diameter were observed. Dislocation densities and misorientations were found to decrease further from the detachment front. Different defects were identified in GID ingots: cellular dislocation pattern (500 to 1400 μm in diameter), boundaries, sub-grains and dislocation sources. Smaller dislocation cells were observed in regions with the highest distortion values. A good correlation is obtained between the distortion level distribution and thermal excess stress distribution maps calculated in the literature. As defects propagate in the ingot, cell sizes decrease, associated dislocation densities increase and the misorientation between domains swiftly increases. While sub-grain boundaries have a known effect on the charge carrier lifetimes, our result reveal the unexpected impact of dislocations cells, which are not visible on PL maps, on carrier lifetimes.

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Cite

BibTeX RIS

BibTeX

@article{medjahed2026study,
  title = {{A study of distortions and related electrical activity in dislocated Si-Cz ingots}},
  author = {Asma A Medjahed and Thu Nhi Tran-Caliste and José Baruchel and Benoit Marie and Sirine Houam and Loic Patout and Gabrielle Regula and Mickael Albaric and Nathalie Mangelinck-Noël and Etienne Pihan},
  journal = {Solar Energy Materials and Solar Cells},
  year = {2026},
  month = oct,
  doi = {10.1016/j.solmat.2026.114755},
  url = {https://hal.science/hal-05852134v1},
  note = {CC BY-NC-ND 4.0},
}

RIS

TY  - JOUR
TI  - A study of distortions and related electrical activity in dislocated Si-Cz ingots
AU  - Asma A Medjahed
AU  - Thu Nhi Tran-Caliste
AU  - José Baruchel
AU  - Benoit Marie
AU  - Sirine Houam
AU  - Loic Patout
AU  - Gabrielle Regula
AU  - Mickael Albaric
AU  - Nathalie Mangelinck-Noël
AU  - Etienne Pihan
PY  - 2026
DA  - 2026/10/08
JO  - Solar Energy Materials and Solar Cells
DO  - 10.1016/j.solmat.2026.114755
UR  - https://hal.science/hal-05852134v1
AB  - This work aims at contributing to increase the understanding of crystal defects and their induced distortions in dislocated silicon Czochralski ingots. A popped-out ingot (PO), which experienced a premature detachment from the melt during the tail pulling step and an ingot with grown-in dislocations (GID), were studied. In each ingot, two wafers, cut at different heights, were characterized by photoluminescence (PL) mapping and Rocking Curve Imaging (RCI). Distortions and misorientations between crystal domains were quantified on large surface areas (up to one fourth) on the wafers. Dislocation densities in the order of a few 10 5 cm -2 were estimated in both ingots. In PO wafers, slip bands were found to be the main distortion structure. Additionally, round-shaped dislocation cells of 100 -300 μm in diameter were observed. Dislocation densities and misorientations were found to decrease further from the detachment front. Different defects were identified in GID ingots: cellular dislocation pattern (500 to 1400 μm in diameter), boundaries, sub-grains and dislocation sources. Smaller dislocation cells were observed in regions with the highest distortion values. A good correlation is obtained between the distortion level distribution and thermal excess stress distribution maps calculated in the literature. As defects propagate in the ingot, cell sizes decrease, associated dislocation densities increase and the misorientation between domains swiftly increases. While sub-grain boundaries have a known effect on the charge carrier lifetimes, our result reveal the unexpected impact of dislocations cells, which are not visible on PL maps, on carrier lifetimes.
SN  - 0927-0248
SN  - 1879-3398
ER  -

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