Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices
- 1Department of Materials Science and Engineering Adana Alparslan Türkeş Science and Technology University Adana Türkiye
- 2Department of Electrical and Electronic Engineering İskenderun Technical University Hatay Türkiye
Abstract
Controlling of electromagnetic wave absorption/reflection remains a significant technological challenge for stealth technology and protecting electronic devices operating in the gigahertz frequency range. Various materials can tune microwave reflection and absorption, thereby enabling adjustable electromagnetic interference (EMI) shielding; however, their multi‐millimeter thickness limits their applicability in integrated electronic systems. In this study, we present a method to modulate the reflection and absorption characteristics of incident electromagnetic waves using sub‐millimeter‐thick 1T/2H‐MoS2 structures. We demonstrate an electric‐field‐driven EMI shielding mechanism for phase‐engineered MoS2 based symmetric devices using PVA and KOH gel electrolyte. The coexistence of 1T and 2H phases provides a dynamic platform in which charge transport, interfacial polarization, and electromagnetic absorption–reflection mechanisms can be continuously regulated under external electric fields. Unlike conventional static EMI shielding approaches, our method enables active modulation capabilities that can dynamically adapt to demanding operational environments.
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BibTeX
@article{akyol2026electrically,
title = {{Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices}},
author = {Mustafa Akyol and Atalay Bozdogan and Hakan Eroglu and Muharrem Karaaslan},
journal = {Advanced Electronic Materials},
year = {2026},
month = oct,
doi = {10.1002/aelm.70523},
url = {https://doi.org/10.1002/aelm.70523},
note = {CC BY},
}
RIS
TY - JOUR
TI - Electrically Tuning Electromagnetic Wave Shielding in Phase Engineered 1T/2H‐MoS2‐Based Devices
AU - Mustafa Akyol
AU - Atalay Bozdogan
AU - Hakan Eroglu
AU - Muharrem Karaaslan
PY - 2026
DA - 2026/10/26
JO - Advanced Electronic Materials
DO - 10.1002/aelm.70523
UR - https://doi.org/10.1002/aelm.70523
AB - Controlling of electromagnetic wave absorption/reflection remains a significant technological challenge for stealth technology and protecting electronic devices operating in the gigahertz frequency range. Various materials can tune microwave reflection and absorption, thereby enabling adjustable electromagnetic interference (EMI) shielding; however, their multi‐millimeter thickness limits their applicability in integrated electronic systems. In this study, we present a method to modulate the reflection and absorption characteristics of incident electromagnetic waves using sub‐millimeter‐thick 1T/2H‐MoS2 structures. We demonstrate an electric‐field‐driven EMI shielding mechanism for phase‐engineered MoS2 based symmetric devices using PVA and KOH gel electrolyte. The coexistence of 1T and 2H phases provides a dynamic platform in which charge transport, interfacial polarization, and electromagnetic absorption–reflection mechanisms can be continuously regulated under external electric fields. Unlike conventional static EMI shielding approaches, our method enables active modulation capabilities that can dynamically adapt to demanding operational environments.
SN - 2199-160X
ER -