Fractional thermal memory effects in a rotating magneto-photo-thermoelastic anisotropic fiber-reinforced semiconductor half-space within the framework of modified photo-thermoelasticity
- 1Faculty of Computer Studies, Arab Open University, El Shorouk City, Egypt
- 2Department of Mathematics, Faculty of Science, Capital University, Helwan, Egypt
- 3Department of Mathematics, Applied College at Mahail Aseer, King Khalid University, Abha, Saudi Arabia
Abstract
This work develops a mathematical framework to investigate a rotating anisotropic fiber-reinforced semiconductor half-space subjected to optical excitation and an external magnetic field while incorporating fractional thermal memory effects. The proposed model is formulated within the modified photo-thermoelasticity theory, allowing the coupled interactions among thermal, mechanical, carrier-diffusion, and electromagnetic fields to be analyzed in a unified framework. The heat-conduction equation is generalized using a fractional-order thermal operator, and the resulting dimensionless governing equations are solved analytically through the normal-mode technique combined with an eigenvalue-based approach. Silicon is considered for numerical implementation, and the effects of the fractional-order parameter, rotational speed, and magnetic-field intensity on temperature, carrier concentration, displacement, and stress distributions are examined. The results demonstrate that fractional thermal memory significantly influences wave propagation and energy transport, while rotation and magnetic loading markedly modify the mechanical response through inertia and magnetoelastic coupling. The proposed model provides useful insights into coupled multiphysical processes relevant to advanced semiconductor and optoelectronic applications.
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BibTeX
@article{emam2026fractional,
title = {{Fractional thermal memory effects in a rotating magneto-photo-thermoelastic anisotropic fiber-reinforced semiconductor half-space within the framework of modified photo-thermoelasticity}},
author = {Adel Emam and M. Yusuf and A. El-Dali and Zaki Mrzog Alaofi},
journal = {Frontiers in Physics},
year = {2026},
month = oct,
doi = {10.3389/fphy.2026.1964122},
url = {https://doi.org/10.3389/fphy.2026.1964122},
note = {CC BY},
}
RIS
TY - JOUR
TI - Fractional thermal memory effects in a rotating magneto-photo-thermoelastic anisotropic fiber-reinforced semiconductor half-space within the framework of modified photo-thermoelasticity
AU - Adel Emam
AU - M. Yusuf
AU - A. El-Dali
AU - Zaki Mrzog Alaofi
PY - 2026
DA - 2026/10/23
JO - Frontiers in Physics
DO - 10.3389/fphy.2026.1964122
UR - https://doi.org/10.3389/fphy.2026.1964122
AB - This work develops a mathematical framework to investigate a rotating anisotropic fiber-reinforced semiconductor half-space subjected to optical excitation and an external magnetic field while incorporating fractional thermal memory effects. The proposed model is formulated within the modified photo-thermoelasticity theory, allowing the coupled interactions among thermal, mechanical, carrier-diffusion, and electromagnetic fields to be analyzed in a unified framework. The heat-conduction equation is generalized using a fractional-order thermal operator, and the resulting dimensionless governing equations are solved analytically through the normal-mode technique combined with an eigenvalue-based approach. Silicon is considered for numerical implementation, and the effects of the fractional-order parameter, rotational speed, and magnetic-field intensity on temperature, carrier concentration, displacement, and stress distributions are examined. The results demonstrate that fractional thermal memory significantly influences wave propagation and energy transport, while rotation and magnetic loading markedly modify the mechanical response through inertia and magnetoelastic coupling. The proposed model provides useful insights into coupled multiphysical processes relevant to advanced semiconductor and optoelectronic applications.
SN - 2296-424X
ER -