PreprintCC BY 4.0arXiv
Thermally stimulated depolarization in hafnium oxide: experiment and numerical simulation
Abstract
This paper presents an experimental and theoretical study of thermally stimulated depolarization (TSD) in hafnium oxide. Three different models for the probability of trap ionization are considered: the Frenkel effect and two variants of the multiphonon trap ionization mechanism, the multiphonon ionization mechanism of isolated traps at low trap concentrations and phonon-assisted tunneling between neighboring traps at high trap concentrations. The best agreement between the TSD experiment and theory is observed for the multiphonon ionization mechanism of isolated traps. Similar thermal energies of electron and hole traps in HfO2 are obtained ~ 1.3 eV.
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BibTeX
@misc{novikov2026thermally,
title = {{Thermally stimulated depolarization in hafnium oxide: experiment and numerical simulation}},
author = {Yu. N. Novikov and D. E. Temnov and E. A. Volgina and M. S. Lebedev and V. A. Gritsenko},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2609.15036},
eprint = {2609.15036},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.15036},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Thermally stimulated depolarization in hafnium oxide: experiment and numerical simulation
AU - Yu. N. Novikov
AU - D. E. Temnov
AU - E. A. Volgina
AU - M. S. Lebedev
AU - V. A. Gritsenko
PY - 2026
DA - 2026/10/14
PB - arXiv
DO - 10.48550/arxiv.2609.15036
UR - https://arxiv.org/abs/2609.15036
AB - This paper presents an experimental and theoretical study of thermally stimulated depolarization (TSD) in hafnium oxide. Three different models for the probability of trap ionization are considered: the Frenkel effect and two variants of the multiphonon trap ionization mechanism, the multiphonon ionization mechanism of isolated traps at low trap concentrations and phonon-assisted tunneling between neighboring traps at high trap concentrations. The best agreement between the TSD experiment and theory is observed for the multiphonon ionization mechanism of isolated traps. Similar thermal energies of electron and hole traps in HfO2 are obtained ~ 1.3 eV.
ER -