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PreprintarXiv licencearXiv

Giant geometric nonlinear transport in inhomogeneously strained Bi2Se3 single crystalline slabs

  • Igor Veremchuk
  • Pavlo Makushko
  • Anita Guarino
  • Muhammad Waqee Ur Rehman
  • Rosalba Tatiana Fittipaldi
  • Tobias Kosub
  • Alexej Pashkin
  • Fabian Ganss
  • Oleg A. Petrenko
  • Proloy T. Das
  • Rui Xu
  • Rhonald Burgos Atencia
4 more authors
  • Debottam Mandal
  • Antonio Vecchione
  • Carmine Ortix
  • Denys Makarov
Open at sourcePDFDOICite

Abstract

Electrical transport in non-centrosymmetric materials exhibits a nonlinear conductivity tensor component that generates second-harmonic voltages in response to applied electric fields. Harnessing this effect is essential for developing zero-threshold electromagnetic energy harvesters and broadband frequency upconverters, both of which require maximizing the nonlinear responsivity. Here, we demonstrate that inhomogeneously strained macroscopic slabs of the topological insulator Bi2Se3 achieve a record-high nonlinear responsivity of 104 μm/V: a six orders of magnitude boost compared to its thin-film counterparts. We attribute this giant enhancement to a classical geometric nonlinear transport effect, which is driven by complex strain gradients within the bulk material. Notably, a similar geometric mechanism known as geometric nonlinear Hall was previously observed only in microscale-patterned structures. Our findings establish macroscopic strain engineering as a powerful route to enhance nonlinear transport, with immediate relevance to a broad class of layered systems, including transition metal dichalcogenides and moiré heterostructures.

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Cite

BibTeXRIS
BibTeX
@misc{veremchuk2026giant,
  title = {{Giant geometric nonlinear transport in inhomogeneously strained Bi$_2$Se$_3$ single crystalline slabs}},
  author = {Igor Veremchuk and Pavlo Makushko and Anita Guarino and Muhammad Waqee Ur Rehman and Rosalba Tatiana Fittipaldi and Tobias Kosub and Alexej Pashkin and Fabian Ganss and Oleg A. Petrenko and Proloy T. Das and Rui Xu and Rhonald Burgos Atencia and Debottam Mandal and Antonio Vecchione and Carmine Ortix and Denys Makarov},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.13542},
  eprint = {2610.13542},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.13542},
}
RIS
TY  - UNPB
TI  - Giant geometric nonlinear transport in inhomogeneously strained Bi_2Se_3 single crystalline slabs
AU  - Igor Veremchuk
AU  - Pavlo Makushko
AU  - Anita Guarino
AU  - Muhammad Waqee Ur Rehman
AU  - Rosalba Tatiana Fittipaldi
AU  - Tobias Kosub
AU  - Alexej Pashkin
AU  - Fabian Ganss
AU  - Oleg A. Petrenko
AU  - Proloy T. Das
AU  - Rui Xu
AU  - Rhonald Burgos Atencia
AU  - Debottam Mandal
AU  - Antonio Vecchione
AU  - Carmine Ortix
AU  - Denys Makarov
PY  - 2026
DA  - 2026/10/09
PB  - arXiv
DO  - 10.48550/arxiv.2610.13542
UR  - https://arxiv.org/abs/2610.13542
AB  - Electrical transport in non-centrosymmetric materials exhibits a nonlinear conductivity tensor component that generates second-harmonic voltages in response to applied electric fields. Harnessing this effect is essential for developing zero-threshold electromagnetic energy harvesters and broadband frequency upconverters, both of which require maximizing the nonlinear responsivity. Here, we demonstrate that inhomogeneously strained macroscopic slabs of the topological insulator Bi_2Se_3 achieve a record-high nonlinear responsivity of 10^4 μm/V: a six orders of magnitude boost compared to its thin-film counterparts. We attribute this giant enhancement to a classical geometric nonlinear transport effect, which is driven by complex strain gradients within the bulk material. Notably, a similar geometric mechanism known as geometric nonlinear Hall was previously observed only in microscale-patterned structures. Our findings establish macroscopic strain engineering as a powerful route to enhance nonlinear transport, with immediate relevance to a broad class of layered systems, including transition metal dichalcogenides and moiré heterostructures.
ER  -