High-Efficiency Field-Free Superconducting Diodes in Mo2N/FePt Bilayers
Abstract
Near-ideal, field-free superconducting diode behavior is demonstrated in room-temperature-grown Mo2N/FePt bilayers. The response is consistent with remanent FePt stripe domains producing polarity-dependent thresholds for flux entry and vortex motion. Micromagnetic simulations reveal a periodic stray-field modulation across the stripes and asymmetric field enhancement near their ends at the bridge edges. One current polarity remains nearly dissipationless up to a sizable fraction of the estimated depairing current, whereas the opposite polarity develops dissipation at much lower current, yielding diode efficiencies up to approximately 85% in the thinner bilayer. The nonreciprocity can be continuously tuned by the in-plane magnetic preparation angle and reversibly switched by reverse-field excursions through the hysteretic reversal of the FePt layer. These results support edge-controlled flux entry and vortex motion as a route to high-efficiency superconducting diodes.
Related
- Polarization-insensitive high-efficiency superconducting nanowire single-photon detector
- High-Efficiency and Large Supercurrent Rectification with Superconducting Coil
- Highly efficient hybrid white organic light-emitting diodes with suppressed efficiency roll-off based on dual triplet-management strategy
- Collective phase modes in twisted d-wave superconducting bilayers
- Interlayer Phase Locking and Sliding Select Topological Melting Channels in Superconducting Bilayers
BibTeX
@misc{cruz2026highefficiency,
title = {{High-Efficiency Field-Free Superconducting Diodes in Mo$_2$N/FePt Bilayers}},
author = {Juan S. Cruz and Emilio De Biasi and Juan C. Zapata and Yeonkyu Lee and Jeehoon Kim and Nestor Haberkorn},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.16972},
eprint = {2610.16972},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.16972},
}
RIS
TY - UNPB
TI - High-Efficiency Field-Free Superconducting Diodes in Mo_2N/FePt Bilayers
AU - Juan S. Cruz
AU - Emilio De Biasi
AU - Juan C. Zapata
AU - Yeonkyu Lee
AU - Jeehoon Kim
AU - Nestor Haberkorn
PY - 2026
DA - 2026/10/12
PB - arXiv
DO - 10.48550/arxiv.2610.16972
UR - https://arxiv.org/abs/2610.16972
AB - Near-ideal, field-free superconducting diode behavior is demonstrated in room-temperature-grown Mo_2N/FePt bilayers. The response is consistent with remanent FePt stripe domains producing polarity-dependent thresholds for flux entry and vortex motion. Micromagnetic simulations reveal a periodic stray-field modulation across the stripes and asymmetric field enhancement near their ends at the bridge edges. One current polarity remains nearly dissipationless up to a sizable fraction of the estimated depairing current, whereas the opposite polarity develops dissipation at much lower current, yielding diode efficiencies up to approximately 85% in the thinner bilayer. The nonreciprocity can be continuously tuned by the in-plane magnetic preparation angle and reversibly switched by reverse-field excursions through the hysteretic reversal of the FePt layer. These results support edge-controlled flux entry and vortex motion as a route to high-efficiency superconducting diodes.
ER -