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Peer-reviewedCC BY 4.0Nanomaterials

Carrier Dynamics in Low-Dimensional and Wide-Bandgap Materials Probed by Terahertz Magneto-Optical Spectroscopy

  • Ali Farooq1,2
  • Muhammad Touqeer3
  • Wen Xu4,5
  • Muhammad Bilal6
  • Huan Xiao7
  • Muhammad Zeeshan8
  • Muhammad Abid Anwar9
  • Francois M. Peeters10,11,12
  • Sichao Du1,13
13 affiliations
  1. 1Zhejiang Key Laboratory of Quantum Materials and Control, School of Information and Electrical Engineering, Hangzhou City University, Hangzhou 310015, China
  2. 2State Key Laboratory of Silicon and Advanced Semiconductor Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  3. 3Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  4. 4Key Laboratory of Materials Physics, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, China
  5. 5School of Physics and Astronomy, Yunnan University, Kunming 650091, China
  6. 6School of Optoelectronic Science and Engineering, Anhui University, Hefei 230601, China
  7. 7Department of Physics, Chongqing Sanxia University of Science and Technology, Wanzhou 404100, China
  8. 8School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China
  9. 9Jinhua Institute of Zhejiang University, Jinhua 321099, China
  10. 10Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgium
  11. 11Departamento de Física, Universidade Federal do Ceará, Fortaleza 60455-760, CE, Brazil
  12. 12Nanjing University of Information Science and Technology, Nanjing 210044, China
  13. 13College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
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Abstract

Terahertz (THz) radiation lies between the microwave and infrared (0.1–10 THz, photon energies ~0.4–40 meV), an energy scale matching the low-energy excitations and picosecond (ps) relaxation of free carriers; this makes THz magneto-optical (MO) spectroscopy a powerful, contactless probe of carrier dynamics in electronic materials. In this review, we summarize the progress in using THz time-domain spectroscopy (TDS) in the Faraday geometry to study the MO properties of low-dimensional and wide-bandgap materials. We first introduce the experimental principles and the theoretical framework, centered on the generalized MO Drude–Smith model that accounts for photon-induced electronic backscattering, and outline how the longitudinal conductivity and the left- and right-handed circularly polarized MO conductivities or conductances are extracted. We also describe how key electronic parameters, the carrier density, relaxation time, effective mass, static dielectric constant, and localization factor, are determined, with the effective mass obtained under a non-cyclotron resonance condition. We then review and compare studies on representative systems, including monolayer and bilayer MoS2, nitrogen-doped carbon nanodots (N-CNDs), nitrogen-doped diamond, and neutron-irradiated hexagonal boron nitride (hBN). Across these systems, common magnetic-field trends emerge: the carrier density and localization factor decrease, while the relaxation time, effective mass, and dielectric constant increase. For nitrogen-doped diamond, the magnetic-field dependences of the Faraday rotation angle and ellipticity reveal a pronounced THz MO response, highlighting its potential as a THz polarization-rotation material. Finally, we discuss the current challenges and future prospects, including broader spectral coverage, higher magnetic fields, spatially and time-resolved measurements, temperature and carrier-density control, material-specific modeling, and THz MO devices. This review highlights THz MO spectroscopy as a versatile tool for probing carrier dynamics in low-dimensional and wide-bandgap materials.

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Cite

BibTeXRIS
BibTeX
@article{farooq2026carrier,
  title = {{Carrier Dynamics in Low-Dimensional and Wide-Bandgap Materials Probed by Terahertz Magneto-Optical Spectroscopy}},
  author = {Ali Farooq and Muhammad Touqeer and Wen Xu and Muhammad Bilal and Huan Xiao and Muhammad Zeeshan and Muhammad Abid Anwar and Francois M. Peeters and Sichao Du},
  journal = {Nanomaterials},
  year = {2026},
  month = oct,
  doi = {10.3390/nano16201298},
  url = {https://www.mdpi.com/2079-4991/16/20/1298},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Carrier Dynamics in Low-Dimensional and Wide-Bandgap Materials Probed by Terahertz Magneto-Optical Spectroscopy
AU  - Ali Farooq
AU  - Muhammad Touqeer
AU  - Wen Xu
AU  - Muhammad Bilal
AU  - Huan Xiao
AU  - Muhammad Zeeshan
AU  - Muhammad Abid Anwar
AU  - Francois M. Peeters
AU  - Sichao Du
PY  - 2026
DA  - 2026/10/01
JO  - Nanomaterials
DO  - 10.3390/nano16201298
UR  - https://www.mdpi.com/2079-4991/16/20/1298
AB  - Terahertz (THz) radiation lies between the microwave and infrared (0.1–10 THz, photon energies ~0.4–40 meV), an energy scale matching the low-energy excitations and picosecond (ps) relaxation of free carriers; this makes THz magneto-optical (MO) spectroscopy a powerful, contactless probe of carrier dynamics in electronic materials. In this review, we summarize the progress in using THz time-domain spectroscopy (TDS) in the Faraday geometry to study the MO properties of low-dimensional and wide-bandgap materials. We first introduce the experimental principles and the theoretical framework, centered on the generalized MO Drude–Smith model that accounts for photon-induced electronic backscattering, and outline how the longitudinal conductivity and the left- and right-handed circularly polarized MO conductivities or conductances are extracted. We also describe how key electronic parameters, the carrier density, relaxation time, effective mass, static dielectric constant, and localization factor, are determined, with the effective mass obtained under a non-cyclotron resonance condition. We then review and compare studies on representative systems, including monolayer and bilayer MoS2, nitrogen-doped carbon nanodots (N-CNDs), nitrogen-doped diamond, and neutron-irradiated hexagonal boron nitride (hBN). Across these systems, common magnetic-field trends emerge: the carrier density and localization factor decrease, while the relaxation time, effective mass, and dielectric constant increase. For nitrogen-doped diamond, the magnetic-field dependences of the Faraday rotation angle and ellipticity reveal a pronounced THz MO response, highlighting its potential as a THz polarization-rotation material. Finally, we discuss the current challenges and future prospects, including broader spectral coverage, higher magnetic fields, spatially and time-resolved measurements, temperature and carrier-density control, material-specific modeling, and THz MO devices. This review highlights THz MO spectroscopy as a versatile tool for probing carrier dynamics in low-dimensional and wide-bandgap materials.
SN  - 2079-4991
ER  -