Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering
Abstract
Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = 3 × 10−9 mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.
Related
- Dual-dielectric-tunable surface phonon polaritons in quasi-one-imensional MgO nanotubes
- Spatiotemporal programming via asymmetric dielectric engineering for nonvolatile 2D optoelectronics
- A Momentum-weighted Interface Stabilization Approach for Fluid-Structure Interaction with Strong Added-Mass Effects
- Associative amphiphilic copolymers enabling emulsion stabilization via host-guest anchoring at the interface: A proof-of-concept
- Surface plasmon-based detection for picosecond ultrasonics in planar gold-dielectric layer geometries
BibTeX
@misc{paranjape2026electrostatic,
title = {{Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering}},
author = {Atharva Paranjape and Kathrin Küster and Olga Shevstova and Lisa Ebo and Toni Hache and Klaus Kern and Rainer Stöhr and Jörg Wrachtrup and Aparajita Singha},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.20137},
eprint = {2609.20137},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.20137},
}
RIS
TY - UNPB
TI - Electrostatic Stabilization of Near-Surface Quantum Sensors via Dielectric Interface Engineering
AU - Atharva Paranjape
AU - Kathrin Küster
AU - Olga Shevstova
AU - Lisa Ebo
AU - Toni Hache
AU - Klaus Kern
AU - Rainer Stöhr
AU - Jörg Wrachtrup
AU - Aparajita Singha
PY - 2026
DA - 2026/09/17
PB - arXiv
DO - 10.48550/arxiv.2609.20137
UR - https://arxiv.org/abs/2609.20137
AB - Control of charge-state stability in near-surface quantum defects is critical for nanoscale sensing, yet remains particularly challenging under ultra-high vacuum (UHV), where surface-induced band bending destabilizes the metrologically relevant charge-state. Here, we present a robust and reproducible approach for stabilizing shallowly implanted (< 10 nm deep) nitrogen-vacancy (NV) centers in near-UHV conditions (P = 3 × 10^−9 mbar) based on dielectric interface engineering. Through measurements on individually addressable NV centers, we demonstrate that a TiO2 coating on the diamond suppresses surface-induced electrostatic fields, yielding a 79% increase n NV- population and a 45% enhancement in NV-spin resonance contrast at room temperature. Coherent control measurements further reveal suppressed charge-state conversion dynamics. These results establish dielectric screening as a powerful and reproducible strategy to engineer charge transition energetics of NV centers in scanning-probe-compatible geometries under extreme conditions.
ER -