Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
Abstract
Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong gate coupling must be achieved without compromising the pristine two-dimensional interface. Here, we demonstrate a coplanar lateral-gating architecture for MoS2 field-effect transistors fabricated directly on single-crystal SrTiO3. The exceptionally high permittivity of SrTiO3 enhances gate-channel coupling. The coplanar geometry eliminates the need for a separate gate insulator, reducing interface disorder. Owing to the quantum paraelectric nature, the SrTiO3 dielectric constant increases upon cooling, enhancing the gate coupling, leading to a decrease in threshold voltage and subthreshold swing an effect that contrasts with conventional FET architectures. The dielectric-free MoS2 surface, combined with enhanced electrostatic control, makes this architecture a promising platform for low-power two-dimensional electronics and cryogenic quantum devices.
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BibTeX
@misc{muragesh2026coplanar,
title = {{Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices}},
author = {Prasad Muragesh and Manav Murali and Venkatesha Modur Ramachandra and Madhu Thalakulam},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.20426},
eprint = {2609.20426},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.20426},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Coplanar Lateral Gating MoS2 on SrTiO3: A Unified Platform for Classical and Quantum Devices
AU - Prasad Muragesh
AU - Manav Murali
AU - Venkatesha Modur Ramachandra
AU - Madhu Thalakulam
PY - 2026
DA - 2026/09/17
PB - arXiv
DO - 10.48550/arxiv.2609.20426
UR - https://arxiv.org/abs/2609.20426
AB - Atomically thin transition-metal dichalcogenides, such as MoS2, offer a promising route to surpass the scaling limits of silicon owing to their excellent electrostatic control and resilience to short-channel effects. Realizing this potential depends critically on gate-stack engineering, where strong gate coupling must be achieved without compromising the pristine two-dimensional interface. Here, we demonstrate a coplanar lateral-gating architecture for MoS2 field-effect transistors fabricated directly on single-crystal SrTiO3. The exceptionally high permittivity of SrTiO3 enhances gate-channel coupling. The coplanar geometry eliminates the need for a separate gate insulator, reducing interface disorder. Owing to the quantum paraelectric nature, the SrTiO3 dielectric constant increases upon cooling, enhancing the gate coupling, leading to a decrease in threshold voltage and subthreshold swing an effect that contrasts with conventional FET architectures. The dielectric-free MoS2 surface, combined with enhanced electrostatic control, makes this architecture a promising platform for low-power two-dimensional electronics and cryogenic quantum devices.
ER -