Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis
Abstract
TaOxNy thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N2/O2 plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 degrees C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta2O5) to oxynitride and nitride environments (TaOxNy and Ta3N5). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.
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BibTeX
@article{chabanais2026multitechniques,
title = {{Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis}},
author = {Florian Chabanais and Babacar Diallo and Aissatou Diop and Angélique Bousquet and Thierry Sauvage and Béatrice Plujat and Sébastien Quoizola and Audrey Soum-Glaude and Laurent Thomas and Éric Tomasella and Antoine Goullet and Mireille Richard-Plouet},
journal = {Thin Solid Films},
year = {2026},
month = oct,
doi = {10.1016/j.tsf.2025.140725},
url = {https://hal.science/hal-05172348v2},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Multi-techniques characterisation of anti-reflective Ta2O5 and TaOxNy thin films deposited by reactive sputtering: coupling X-ray photoelectron spectroscopy, scanning/transmission electron microscopy and ion beam analysis
AU - Florian Chabanais
AU - Babacar Diallo
AU - Aissatou Diop
AU - Angélique Bousquet
AU - Thierry Sauvage
AU - Béatrice Plujat
AU - Sébastien Quoizola
AU - Audrey Soum-Glaude
AU - Laurent Thomas
AU - Éric Tomasella
AU - Antoine Goullet
AU - Mireille Richard-Plouet
PY - 2026
DA - 2026/10/06
JO - Thin Solid Films
DO - 10.1016/j.tsf.2025.140725
UR - https://hal.science/hal-05172348v2
AB - TaOxNy thin films were elaborated by reactive magnetron sputtering of a Ta target in an Ar/N2/O2 plasma mixture. These layers are intended to be used as antireflective coatings in systems for concentrated solar applications (operating temperature around 500 degrees C in air). The investigation of these layers using a set of complementary techniques, including transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), and ion beam analysis (IBA), revealed the impact of nitrogen flux during deposition on the overall morphology and elemental composition. These characterizations also highlighted the various chemical environments constituting the thin films, ranging from oxidized environments (Ta2O5) to oxynitride and nitride environments (TaOxNy and Ta3N5). It was also shown that with a low nitrogen flow, nitrogen is present only near the substrate and is absent in the rest of the layer. The IBA technique was also carried out to quantify the concentration of light elements as a function of depth, in particular H, which is not detected by the other techniques used in this paper (XPS and TEM). It has been shown that the majority of hydrogen atoms is incorporated into thin films during deposition as hydroxyl groups or only close to the surface, depending on the samples.
SN - 0040-6090
ER -