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PreprintCC BY-NC-SA 4.0arXiv

First principles modeling of group-III acceptors and their potential lifetime-limiting effects in n-type 4H-SiC

  • José Coutinho
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Abstract

Accurate modeling of p-type dopants in 4H-SiC is essential for understanding the mechanisms governing doping efficiency and carrier transport. In this work, we revisit the electronic structure of boron- and aluminum-related acceptors using hybrid density functional methods. Besides defect formation energies and thermodynamic transition levels, we present a quantitative look into the carrier capture kinetics within the multi-phonon emission framework. Our results reveal striking differences between the two most relevant p-type dopants. While BSi and BC exhibit nearly identical formation energies, consistent with the occurrence of both defects, the formation energy of AlC under intrinsic conditions is approximately 6.5 eV higher than that of AlSi, confirming previous findings that the former is unlikely to occur. We further find that BSi possesses large electron and hole capture cross sections, identifying it as a plausible source of minority-carrier lifetime degradation of n-type material contaminated with boron. In addition, we predict a previously unexplored donor transition for BC. If experimentally confirmed, this defect would represent additional problems to both p-type doped and boron contaminated 4H-SiC, not only because of its ineffectiveness as an electric dopant, but also due to trapping of up to two free holes, reducing the free-hole concentration and increasing scattering effects.

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Cite

BibTeXRIS
BibTeX
@misc{coutinho2026first,
  title = {{First principles modeling of group-III acceptors and their potential lifetime-limiting effects in n-type 4H-SiC}},
  author = {José Coutinho},
  howpublished = {arXiv},
  year = {2026},
  month = oct,
  doi = {10.48550/arxiv.2610.07942},
  eprint = {2610.07942},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2610.07942},
  note = {CC BY-NC-SA 4.0},
}
RIS
TY  - UNPB
TI  - First principles modeling of group-III acceptors and their potential lifetime-limiting effects in n-type 4H-SiC
AU  - José Coutinho
PY  - 2026
DA  - 2026/10/06
PB  - arXiv
DO  - 10.48550/arxiv.2610.07942
UR  - https://arxiv.org/abs/2610.07942
AB  - Accurate modeling of p-type dopants in 4H-SiC is essential for understanding the mechanisms governing doping efficiency and carrier transport. In this work, we revisit the electronic structure of boron- and aluminum-related acceptors using hybrid density functional methods. Besides defect formation energies and thermodynamic transition levels, we present a quantitative look into the carrier capture kinetics within the multi-phonon emission framework. Our results reveal striking differences between the two most relevant p-type dopants. While B_Si and B_C exhibit nearly identical formation energies, consistent with the occurrence of both defects, the formation energy of Al_C under intrinsic conditions is approximately 6.5 eV higher than that of Al_Si, confirming previous findings that the former is unlikely to occur. We further find that B_Si possesses large electron and hole capture cross sections, identifying it as a plausible source of minority-carrier lifetime degradation of n-type material contaminated with boron. In addition, we predict a previously unexplored donor transition for B_C. If experimentally confirmed, this defect would represent additional problems to both p-type doped and boron contaminated 4H-SiC, not only because of its ineffectiveness as an electric dopant, but also due to trapping of up to two free holes, reducing the free-hole concentration and increasing scattering effects.
ER  -