Deterministic patterning and alignment of tellurium quantum wires using nanoscale templates
Abstract
Tellurium (Te) is an intriguing one-dimensional (1D) semiconductor that has recently attracted considerable interest as a p-type channel material. However, scalable synthesis methods have lacked control over the orientation and patterning of the Te atomic chains, thus limiting its practical use. Guided by theory, we overcome this challenge using nanowire-shaped templates to achieve oriented, single-crystal growth of Te on amorphous substrates. Strong alignment of Te atomic chains is achieved as template widths are reduced to sub-20 nm. This high structural order, confirmed by 4D scanning transmission electron microscopy, enables the observation of pristine quantum transport phenomena for deterministically patterned Te. Field-effect transistors exhibit well-defined conductance plateaus at 77 K due to population of individual 1D subbands. Furthermore, Coulomb blockade emerges at 1.7 K, with the Te channel acting as a gate-tunable quantum dot. This synthesis approach provides a scalable pathway for integration of Te-based quantum materials for future electronic and quantum technologies.
Related
- Superconductivity of Tellurium Polyhydride with Tc above 90K
- Growth of quartet correlations in neutron-rich tellurium isotopes within quartet Bardeen-Cooper-Schrieffer theory
- Evolution and breakdown of chiral anomaly in Weyl semiconductor tellurium
- Mesoscale Crystallographic Helicity in Confined Tellurium Quantum Wires
- Tellurium trioxide as an n-type wide-gap semiconductor with ultrahigh work functions from first principles
BibTeX
@misc{rahman2026deterministic,
title = {{Deterministic patterning and alignment of tellurium quantum wires using nanoscale templates}},
author = {I K M Reaz Rahman and Scott Dhuey and Moniruzzaman Jamal and Taehoon Kim and Naoki Higashitarumizu and Selven Virasawmy and Aidar Kemelbay and Genki Ohkatsu and Aditya Nirmale and Inha Kim and Hyong Min Kim and Karen C. Bustillo and Joel W. Ager III and Daryl C. Chrzan and Mary Scott and Yutaka Majima and Ali Javey},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.12324},
eprint = {2609.12324},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.12324},
}
RIS
TY - UNPB
TI - Deterministic patterning and alignment of tellurium quantum wires using nanoscale templates
AU - I K M Reaz Rahman
AU - Scott Dhuey
AU - Moniruzzaman Jamal
AU - Taehoon Kim
AU - Naoki Higashitarumizu
AU - Selven Virasawmy
AU - Aidar Kemelbay
AU - Genki Ohkatsu
AU - Aditya Nirmale
AU - Inha Kim
AU - Hyong Min Kim
AU - Karen C. Bustillo
AU - Joel W. Ager III
AU - Daryl C. Chrzan
AU - Mary Scott
AU - Yutaka Majima
AU - Ali Javey
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.12324
UR - https://arxiv.org/abs/2609.12324
AB - Tellurium (Te) is an intriguing one-dimensional (1D) semiconductor that has recently attracted considerable interest as a p-type channel material. However, scalable synthesis methods have lacked control over the orientation and patterning of the Te atomic chains, thus limiting its practical use. Guided by theory, we overcome this challenge using nanowire-shaped templates to achieve oriented, single-crystal growth of Te on amorphous substrates. Strong alignment of Te atomic chains is achieved as template widths are reduced to sub-20 nm. This high structural order, confirmed by 4D scanning transmission electron microscopy, enables the observation of pristine quantum transport phenomena for deterministically patterned Te. Field-effect transistors exhibit well-defined conductance plateaus at 77 K due to population of individual 1D subbands. Furthermore, Coulomb blockade emerges at 1.7 K, with the Te channel acting as a gate-tunable quantum dot. This synthesis approach provides a scalable pathway for integration of Te-based quantum materials for future electronic and quantum technologies.
ER -