Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector
Abstract
We demonstrate a monolithic telecom C-band single-photon platform based on low-density InAs/InP quantum dots grown on an InGaAsP/InP distributed Bragg reflector, with simulated upward light-extraction efficiency exceeding 10% within the 40 nm spectral band. Enhanced light extraction is crucial for wide-field photoluminescence imaging, enabling approximately 3 nm statistical centroid-localization precision of QD emitters due to improved signal-to-noise ratio. The identified charged exciton emitting at 1549.5 nm exhibits single-photon emission purity up to 94.7%, validated by a raw peak-area integration under pulsed quasi-resonant excitation. Under these conditions, photons emitted sequentially from the unprocessed planar structure reveal a raw two-photon interference visibility of 51% of the photon wave packet within the 2 ns time window and 41% over a 4 ns integration window, all without Purcell enhancement typical for cavity-embedded emitters. Combining broadband extraction, high photon coherence, and emitter preselection on a native III-V wafer, this architecture paves the way for marker-based deterministic fabrication of high-quality monolithic nanophotonic devices.
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BibTeX
@misc{mrowinski2026broadband,
title = {{Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector}},
author = {Paweł Mrowiński and Jan Śmigiel and Mikołaj Badura and Beata Ściana and Wojciech Kijaszek and Emilia Zięba-Ostój and Paweł Holewa and Marcin Syperek},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.30905},
eprint = {2610.30905},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.30905},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Broadband emitter localization and prefabrication two-photon interference from InAs/InP quantum dots monolithically grown on an InGaAsP/InP distributed Bragg reflector
AU - Paweł Mrowiński
AU - Jan Śmigiel
AU - Mikołaj Badura
AU - Beata Ściana
AU - Wojciech Kijaszek
AU - Emilia Zięba-Ostój
AU - Paweł Holewa
AU - Marcin Syperek
PY - 2026
DA - 2026/10/22
PB - arXiv
DO - 10.48550/arxiv.2610.30905
UR - https://arxiv.org/abs/2610.30905
AB - We demonstrate a monolithic telecom C-band single-photon platform based on low-density InAs/InP quantum dots grown on an InGaAsP/InP distributed Bragg reflector, with simulated upward light-extraction efficiency exceeding 10% within the 40 nm spectral band. Enhanced light extraction is crucial for wide-field photoluminescence imaging, enabling approximately 3 nm statistical centroid-localization precision of QD emitters due to improved signal-to-noise ratio. The identified charged exciton emitting at 1549.5 nm exhibits single-photon emission purity up to 94.7%, validated by a raw peak-area integration under pulsed quasi-resonant excitation. Under these conditions, photons emitted sequentially from the unprocessed planar structure reveal a raw two-photon interference visibility of 51% of the photon wave packet within the 2 ns time window and 41% over a 4 ns integration window, all without Purcell enhancement typical for cavity-embedded emitters. Combining broadband extraction, high photon coherence, and emitter preselection on a native III-V wafer, this architecture paves the way for marker-based deterministic fabrication of high-quality monolithic nanophotonic devices.
ER -