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Peer-reviewedCC BY 4.0Optics Express

Optically writable atomic vapor memory as a substrate for optical reservoir computing

  • Elizabeth Robertson1,2
  • Mingwei Yang1
  • Lina Jaurigue3
  • Guillermo Gallego2,4
  • Kathy Lüdge3
  • Janik Wolters1,4,5
5 affiliations
  1. 1Institute of Physics, Technische Universität Berlin
  2. 2Technical University of Berlin
  3. 3Institut für Physik, Technische Universität Illmenau
  4. 4Einstein Center Digital Future (ECDF)
  5. 5AQLS UG Haftungsbeschränkt
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Abstract

We present an optical random access memory (ORAM) based on warm cesium (Cs) atomic vapor and demonstrate its operation as the physical substrate of a reservoir computer. Information is stored in the hyperfine population distribution of a Cs ensemble via optical pumping and retrieved through differential probe absorption. Spatial multiplexing via acousto-optic deflection provides eight addressable memory rails able to store up to 3.9 bits of information per rail. Employing this platform as a temporally multiplexed reservoir, we achieve a kernel rank (KR =8.8 ± 0.4), and a minimum bit error rate of 0.02 ± 0.01 on the Exclusive-or (XOR) benchmark. We find the limited memory lifetime constrains the achievable temporal depth, encouraging further research into fast addressable memories. This constitutes the first demonstration of a free-space, optically writable atomic RAM as a substrate in an optical reservoir computing system.

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Cite

BibTeXRIS
BibTeX
@article{robertson2026optically,
  title = {{Optically writable atomic vapor memory as a substrate for optical reservoir computing}},
  author = {Elizabeth Robertson and Mingwei Yang and Lina Jaurigue and Guillermo Gallego and Kathy Lüdge and Janik Wolters},
  journal = {Optics Express},
  year = {2026},
  month = oct,
  doi = {10.1364/oe.612547},
  url = {https://opg.optica.org/abstract.cfm?URI=oe-34-21-39389},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Optically writable atomic vapor memory as a substrate for optical reservoir computing
AU  - Elizabeth Robertson
AU  - Mingwei Yang
AU  - Lina Jaurigue
AU  - Guillermo Gallego
AU  - Kathy Lüdge
AU  - Janik Wolters
PY  - 2026
DA  - 2026/10/09
JO  - Optics Express
DO  - 10.1364/oe.612547
UR  - https://opg.optica.org/abstract.cfm?URI=oe-34-21-39389
AB  - We present an optical random access memory (ORAM) based on warm cesium (Cs) atomic vapor and demonstrate its operation as the physical substrate of a reservoir computer. Information is stored in the hyperfine population distribution of a Cs ensemble via optical pumping and retrieved through differential probe absorption. Spatial multiplexing via acousto-optic deflection provides eight addressable memory rails able to store up to 3.9 bits of information per rail. Employing this platform as a temporally multiplexed reservoir, we achieve a kernel rank (KR =8.8 ± 0.4), and a minimum bit error rate of 0.02 ± 0.01 on the Exclusive-or (XOR) benchmark. We find the limited memory lifetime constrains the achievable temporal depth, encouraging further research into fast addressable memories. This constitutes the first demonstration of a free-space, optically writable atomic RAM as a substrate in an optical reservoir computing system.
SN  - 1094-4087
ER  -