Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure

Abstract

In this study, we examine the surface sensitivity of a transition metal dichalcogenide (TiTe2) grown using the Chemical Vapor Transport (CVT) technique at high pressure and study the surface changes in the sample upon exposure to air as well as its crystallographic properties upon e-beam exposure. We examine the local density of States (LDOS) of the mechanically exfoliated sample surface before and after exposure using Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and find a metal-to-semiconductor transition at the surface. The STM analysis shows a clear change in surface roughness which indicates the formation of an adlayer on the surface of the sample. The crystal structure was examined using X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM), indicating a phase transition from a single-crystalline hexagonal phase to a polycrystalline state via a distorted monoclinic phase. Furthermore, the presence of a possible superlattice suggests non-stoichiometric TixTey at the surface of the exposed layer.

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BibTeX RIS

BibTeX

@misc{pokhrel2026crystallographic,
  title = {{Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure}},
  author = {Bishal Pokhrel and Joel Quarnstrom and Saraswati Shrestha and Halle Helfrich and Elena Echeverria and David N. McIlroy and Andrew J. Yost},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.11992},
  eprint = {2609.11992},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.11992},
}

RIS

TY  - UNPB
TI  - Crystallographic and Electronic Phase Changes in TiTe2 via Atmospheric and Electron Beam Exposure
AU  - Bishal Pokhrel
AU  - Joel Quarnstrom
AU  - Saraswati Shrestha
AU  - Halle Helfrich
AU  - Elena Echeverria
AU  - David N. McIlroy
AU  - Andrew J. Yost
PY  - 2026
DA  - 2026/09/09
PB  - arXiv
DO  - 10.48550/arxiv.2609.11992
UR  - https://arxiv.org/abs/2609.11992
AB  - In this study, we examine the surface sensitivity of a transition metal dichalcogenide (TiTe2) grown using the Chemical Vapor Transport (CVT) technique at high pressure and study the surface changes in the sample upon exposure to air as well as its crystallographic properties upon e-beam exposure. We examine the local density of States (LDOS) of the mechanically exfoliated sample surface before and after exposure using Scanning Tunneling Microscopy/Spectroscopy (STM/STS) and find a metal-to-semiconductor transition at the surface. The STM analysis shows a clear change in surface roughness which indicates the formation of an adlayer on the surface of the sample. The crystal structure was examined using X-ray Diffraction (XRD) and Transmission Electron Microscopy (TEM), indicating a phase transition from a single-crystalline hexagonal phase to a polycrystalline state via a distorted monoclinic phase. Furthermore, the presence of a possible superlattice suggests non-stoichiometric TixTey at the surface of the exposed layer.
ER  -

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