A relational fabrication-to-modeling database for memristor devices
Abstract
Resistive random access memory (RRAM) devices, also known as memristors, are highly dependent on fabrication, location on the wafer, and measurement protocols. However, openly available large-scale memristor datasets remain scarce, particularly those that combine experimental metadata with electrical measurements and preserve explicit links across the experimental workflow. Here, we present a comprehensive relational database of automated electrical characterization data from oxide-based memristors. The database links 6,190 memristor devices across TiN/HfOx/TiN, Pt/TiOx/AlOy/Pt, and Pt/TiOx/Pt stacks to 161,006 validated experiments and over 169 million electrical point records. It integrates fabrication, wafer mapping, electrical characterization, and modeling to describe electroforming, current-voltage non-linearity, memory windows (R_off/R_on), switching dynamics, and short-term volatility. Released as a normalized and indexed SQLite database with schema documentation, graphical user interfaces, and examples of empirical modeling, this resource supports provenance-aware querying, statistical analysis, and data-driven applications for the development of future memristor technologies.
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BibTeX
@misc{gan2026relational,
title = {{A relational fabrication-to-modeling database for memristor devices}},
author = {Lai Gan and Guoyang Huang and Deepika Yadav and Spyros Stathopoulos and Ben D. Rowlinson and Themis Prodromakis},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.01500},
eprint = {2609.01500},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.01500},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - A relational fabrication-to-modeling database for memristor devices
AU - Lai Gan
AU - Guoyang Huang
AU - Deepika Yadav
AU - Spyros Stathopoulos
AU - Ben D. Rowlinson
AU - Themis Prodromakis
PY - 2026
DA - 2026/09/01
PB - arXiv
DO - 10.48550/arxiv.2609.01500
UR - https://arxiv.org/abs/2609.01500
AB - Resistive random access memory (RRAM) devices, also known as memristors, are highly dependent on fabrication, location on the wafer, and measurement protocols. However, openly available large-scale memristor datasets remain scarce, particularly those that combine experimental metadata with electrical measurements and preserve explicit links across the experimental workflow. Here, we present a comprehensive relational database of automated electrical characterization data from oxide-based memristors. The database links 6,190 memristor devices across TiN/HfOx/TiN, Pt/TiOx/AlOy/Pt, and Pt/TiOx/Pt stacks to 161,006 validated experiments and over 169 million electrical point records. It integrates fabrication, wafer mapping, electrical characterization, and modeling to describe electroforming, current-voltage non-linearity, memory windows (R_off/R_on), switching dynamics, and short-term volatility. Released as a normalized and indexed SQLite database with schema documentation, graphical user interfaces, and examples of empirical modeling, this resource supports provenance-aware querying, statistical analysis, and data-driven applications for the development of future memristor technologies.
ER -