Tailoring the Structural, Optical, and Electrical Performance of PVA Through Sn0.8Mn0.2S Nanostructures Incorporation for Optoelectronic Applications
- 1Department of Physics, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
Abstract
This work aims to produce a new nanocomposite of Sn0.8Mn0.2S nanostructures incorporated into polyvinyl alcohol (PVA) for optoelectronic applications. Sn0.8Mn0.2S/PVA nanocomposite was prepared by combining a precipitation-based synthesis of Sn0.8Mn0.2S with the solution casting of the PVA matrix. FTIR spectroscopy was used to examine the chemical interactions and bonding between the Sn0.8Mn0.2S nanostructures and PVA chains. Morphological properties were investigated by the SEM technique. The X-ray diffraction technique was used to study the structural properties. UV–Visible spectroscopy was applied to explore the optical properties. Optical analysis shows that the direct and indirect optical bandgap decreased from 5.36 and 4.95 eV for the plain PVA to 1.94 and 1.32 eV at the highest loading (10 wt.%), accompanied by an increase in the refractive index from 1.69 to 2.33. Both the dielectric constants and optical conductivity of PVA likewise enhanced markedly with an increasing Sn0.8Mn0.2S amount. Four-probe DC measurements performed across 300 to 400 K demonstrated a reduction in PVA resistivity together with a drop in the activation energy, from 0.39 eV down to 0.18 eV, as the loading increased up to 1.0 wt.%, identifying this concentration as the most favorable for electrical performance. These findings recommend Sn0.8Mn0.2S nanostructures as an effective means of engineering the structural, optical, and electrical characteristics of PVA, with a clear relevance to optoelectronic device applications.
Related
- Electronic structure and optoelectronic performance of a nanostructured copper(ii) pyranoquinoline complex: DFT insights for temperature-sensing and photodetection applications
- Spray pyrolysis derived Ce-doped SnO2 nanoparticles-based thin films: Tailoring band gap and conductivity for energy and optoelectronic applications
- Tetrahedral DNA Nanostructures: A Structural-Family-Aware Review from Computational Design and Biological Stability to Translational Nanomedicine
- Simultaneous Site- and Residue-Specific Incorporation of Fluorinated Amino Acids for In-Cell Structural Biology by 19F Magic Angle Spinning NMR Spectroscopy
- Valorization of cotton waste into cellulose nanocrystals and their incorporation into electrospun poly (vinyl alcohol) nanofibrous membranes with enhanced thermal and structural properties
BibTeX
@article{althobaiti2026tailoring,
title = {{Tailoring the Structural, Optical, and Electrical Performance of PVA Through Sn0.8Mn0.2S Nanostructures Incorporation for Optoelectronic Applications}},
author = {Mohammed G. Althobaiti},
journal = {Polymers},
year = {2026},
month = oct,
doi = {10.3390/polym18202577},
url = {https://www.mdpi.com/2073-4360/18/20/2577},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Tailoring the Structural, Optical, and Electrical Performance of PVA Through Sn0.8Mn0.2S Nanostructures Incorporation for Optoelectronic Applications
AU - Mohammed G. Althobaiti
PY - 2026
DA - 2026/10/19
JO - Polymers
DO - 10.3390/polym18202577
UR - https://www.mdpi.com/2073-4360/18/20/2577
AB - This work aims to produce a new nanocomposite of Sn0.8Mn0.2S nanostructures incorporated into polyvinyl alcohol (PVA) for optoelectronic applications. Sn0.8Mn0.2S/PVA nanocomposite was prepared by combining a precipitation-based synthesis of Sn0.8Mn0.2S with the solution casting of the PVA matrix. FTIR spectroscopy was used to examine the chemical interactions and bonding between the Sn0.8Mn0.2S nanostructures and PVA chains. Morphological properties were investigated by the SEM technique. The X-ray diffraction technique was used to study the structural properties. UV–Visible spectroscopy was applied to explore the optical properties. Optical analysis shows that the direct and indirect optical bandgap decreased from 5.36 and 4.95 eV for the plain PVA to 1.94 and 1.32 eV at the highest loading (10 wt.%), accompanied by an increase in the refractive index from 1.69 to 2.33. Both the dielectric constants and optical conductivity of PVA likewise enhanced markedly with an increasing Sn0.8Mn0.2S amount. Four-probe DC measurements performed across 300 to 400 K demonstrated a reduction in PVA resistivity together with a drop in the activation energy, from 0.39 eV down to 0.18 eV, as the loading increased up to 1.0 wt.%, identifying this concentration as the most favorable for electrical performance. These findings recommend Sn0.8Mn0.2S nanostructures as an effective means of engineering the structural, optical, and electrical characteristics of PVA, with a clear relevance to optoelectronic device applications.
SN - 2073-4360
ER -