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PreprintCC BYChemRxiv

Temperature Range

  • Arun Haridas Choolakkal1,2
  • Vladyslav Rogoz1,2
  • Jarkko Etula3
  • Emma Salmi3
  • Taneli Juntunen3
  • Grzegorz Greczynski1,2
  • Jens Birch1,2
  • Henrik Pedersen1,2
  1. 1Department of Physics, Chemistry and Biology
  2. 2Linköping University
  3. 3Canatu, Tiilenlyöjänkuja 9A, Vantaa, Finland, FI-01720
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Abstract

Perfectly uniform and conformal thin films of materials are routinely deposited by chemical vapor deposition (CVD) for a range of applications, especially in the semiconductor industry. The most common way to enable highly conformal deposition is to operate the CVD process in the kinetically limited temperature regime, i.e., at the lower temperature range where the deposition chemistry is active. Here, we present the unexpected finding that a conformal CVD process is also available at very high temperatures. When doing CVD of boron carbide on freestanding carbon nanotubes (CNT) at 1000 °C, i.e., in the thermodynamically limited temperature regime, the process afforded fully conformal layer of boron carbide on the CNTs. In contrast, depositions at 700 and 850 °C afforded sub-conformal depositions. This result indicate a lower reaction probability caused by the enhanced desorption of growth species at higher temperatures.

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Cite

BibTeXRIS
BibTeX
@misc{choolakkal2026temperature,
  title = {{Temperature Range}},
  author = {Arun Haridas Choolakkal and Vladyslav Rogoz and Jarkko Etula and Emma Salmi and Taneli Juntunen and Grzegorz Greczynski and Jens Birch and Henrik Pedersen},
  howpublished = {ChemRxiv},
  year = {2026},
  month = oct,
  doi = {10.26434/chemrxiv.15010841/v1},
  url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010841/v1},
  note = {CC BY},
}
RIS
TY  - UNPB
TI  - Temperature Range
AU  - Arun Haridas Choolakkal
AU  - Vladyslav Rogoz
AU  - Jarkko Etula
AU  - Emma Salmi
AU  - Taneli Juntunen
AU  - Grzegorz Greczynski
AU  - Jens Birch
AU  - Henrik Pedersen
PY  - 2026
DA  - 2026/10/22
PB  - ChemRxiv
DO  - 10.26434/chemrxiv.15010841/v1
UR  - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15010841/v1
AB  - Perfectly uniform and conformal thin films of materials are routinely deposited by chemical vapor deposition (CVD) for a range of applications, especially in the semiconductor industry. The most common way to enable highly conformal deposition is to operate the CVD process in the kinetically limited temperature regime, i.e., at the lower temperature range where the deposition chemistry is active. Here, we present the unexpected finding that a conformal CVD process is also available at very high temperatures. When doing CVD of boron carbide on freestanding carbon nanotubes (CNT) at 1000 °C, i.e., in the thermodynamically limited temperature regime, the process afforded fully conformal layer of boron carbide on the CNTs. In contrast, depositions at 700 and 850 °C afforded sub-conformal depositions. This result indicate a lower reaction probability caused by the enhanced desorption of growth species at higher temperatures.
ER  -