Uniaxial Tensile Behavior of β-InSe Nanosheets: Thickness-Dependent Strength and Progressive Failure
- 1Shanghai Key Laboratory of High-Resolution Electron Microscopy, School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
Abstract
Layered indium selenide (InSe) is a promising semiconductor for optoelectronic, thermoelectric, and flexible-device applications, for which mechanical reliability is essential to device integration and operation. In this study, the mechanical behavior of β-InSe nanosheets was investigated using device-assisted in situ scanning electron microscopy (SEM) uniaxial tensile testing. Within the investigated thickness range, the first-instability stress generally increased with decreasing thickness, reaching a maximum measured value of 0.972 GPa, while the first-instability strain reached up to 7.383%. Notably, first instability did not lead to immediate complete fracture: some specimens continued to sustain load after initial instability, with the highest final failure strain reaching approximately 19.099%. Experimental results further showed that different portions of the nanosheet thickness fractured sequentially at different spatial locations, leading to progressive failure rather than instantaneous rupture of the entire load-bearing cross-section. These findings provide experimental insight into the thickness-dependent tensile response and progressive failure behavior of layered InSe nanosheets at the micro-/nanoscale.
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BibTeX
@article{zhou2026uniaxial,
title = {{Uniaxial Tensile Behavior of β-InSe Nanosheets: Thickness-Dependent Strength and Progressive Failure}},
author = {Shansong Zhou and Hongti Zhang},
journal = {Nanomaterials},
year = {2026},
month = oct,
doi = {10.3390/nano16211353},
url = {https://www.mdpi.com/2079-4991/16/21/1353},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Uniaxial Tensile Behavior of β-InSe Nanosheets: Thickness-Dependent Strength and Progressive Failure
AU - Shansong Zhou
AU - Hongti Zhang
PY - 2026
DA - 2026/10/24
JO - Nanomaterials
DO - 10.3390/nano16211353
UR - https://www.mdpi.com/2079-4991/16/21/1353
AB - Layered indium selenide (InSe) is a promising semiconductor for optoelectronic, thermoelectric, and flexible-device applications, for which mechanical reliability is essential to device integration and operation. In this study, the mechanical behavior of β-InSe nanosheets was investigated using device-assisted in situ scanning electron microscopy (SEM) uniaxial tensile testing. Within the investigated thickness range, the first-instability stress generally increased with decreasing thickness, reaching a maximum measured value of 0.972 GPa, while the first-instability strain reached up to 7.383%. Notably, first instability did not lead to immediate complete fracture: some specimens continued to sustain load after initial instability, with the highest final failure strain reaching approximately 19.099%. Experimental results further showed that different portions of the nanosheet thickness fractured sequentially at different spatial locations, leading to progressive failure rather than instantaneous rupture of the entire load-bearing cross-section. These findings provide experimental insight into the thickness-dependent tensile response and progressive failure behavior of layered InSe nanosheets at the micro-/nanoscale.
SN - 2079-4991
ER -