Skip to content
DraconiticResearch
Search Sources API
201,683 studies31 sourcesUpdated 19 min ago
Peer-reviewedCC BY 4.0Physical Review Research

Strain- and confinement-induced topological phases in noncentrosymmetric wurtzite HgTe

Abstract

While three-dimensional Dirac semimetals have been extensively studied in centrosymmetric materials such as Cd3As2 and Na3Bi , the recent colloidal synthesis of wurtzite HgTe (wz-HgTe) opens new opportunities for exploring topological quantum phases in noncentrosymmetric systems. Building on recent evidence that bulk wz-HgTe is a noncentrosymmetric Dirac semimetal, we investigate how strain and quantum confinement reshape its topology. To this end, we combine density-functional theory, semiempirical tight-binding, and k · p approaches. Bulk wz-HgTe hosts two Dirac points along the Γ – A line, i.e., along the c axis, located only 37 meV above the Fermi level, indicating that the Dirac regime should be experimentally accessible by doping or electrostatic gating. We show that biaxial strain drives a sequence of topological phase transitions from a Dirac semimetal to a three-dimensional topological insulator and eventually to a multiband metal. In (0001) thin films, quantum confinement induces oscillatory transitions between trivial and topological insulating phases. We demonstrate that this behavior is governed not only by the underlying s – p band inversion, but also by the crystal-field splitting specific to the wurtzite structure and by the presence of bulk Dirac points. In contrast, (1-100) films exhibit a single topological transition and, above a critical thickness, develop surface states forming Fermi-arc-like contours that connect the projections of the Dirac points in the two-dimensional Brillouin zone. In the same weak-confinement regime, semimetallic nanowires oriented along the c axis are predicted to host localized edge states that should be accessible to transport measurements or scanning tunneling spectroscopy. These results establish the topological phase diagram of wz-HgTe beyond the strong-confinement regime explored so far and reveal how crystal symmetry, inversion breaking, strain, and confinement combine to reshape the topology of a Dirac material. More broadly, they identify wurtzite HgTe as a promising platform for engineering topological phases in experimentally relevant nanostructures.

Related

  1. Strain-overlap and surface-confinement engineering in AlScN/YIG magnetoacoustic devices
    Kevin Künstle, Kaya Gauch, Agnė Žukauskaitė +2
    arXivPreprintCC BY 4.0Full textCondensed matterarXiv
  2. Strain-Programmable Interior Topological Channels
    Jiawei Xia, Shuze Zhu
    arXivPreprintarXiv licenceFull textCondensed matterarXiv
  3. Confinement-Induced Pumping of Chiral Active Fluids
    Joscha Mecke, Yongxiang Gao, Marisol Ripoll
    arXivPreprintCC BY 4.0Full textCondensed matterStatistical & nonlinear physicsarXiv
  4. Confinement-induced bound state and effective potential for microwave-shielded ultracold molecules
    Linyi Zhang, Xiaoling Cui
    arXivPreprintarXiv licenceFull textAtomic, molecular & optical physicsCondensed matterarXiv
  5. Strain Engineering of the Topological Gap and Tunable Chern Numbers in the 2D Kagome Metal-Organic Framework Eu2(C6H4)3
    Jiaxuan Guo, Simin Nie, Fritz B. Prinz
    arXivPreprintarXiv licenceFull textCondensed matterarXiv
BibTeX
@article{hage2026strain,
  title = {{Strain- and confinement-induced topological phases in noncentrosymmetric wurtzite HgTe}},
  author = {Antoine Hage and Jing Li and Christophe Delerue},
  journal = {Physical Review Research},
  year = {2026},
  month = sep,
  doi = {10.1103/5pj7-34v4},
  url = {https://hal.science/hal-05754313v1},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - Strain- and confinement-induced topological phases in noncentrosymmetric wurtzite HgTe
AU  - Antoine Hage
AU  - Jing Li
AU  - Christophe Delerue
PY  - 2026
DA  - 2026/09/16
JO  - Physical Review Research
DO  - 10.1103/5pj7-34v4
UR  - https://hal.science/hal-05754313v1
AB  - While three-dimensional Dirac semimetals have been extensively studied in centrosymmetric materials such as Cd3As2 and Na3Bi , the recent colloidal synthesis of wurtzite HgTe (wz-HgTe) opens new opportunities for exploring topological quantum phases in noncentrosymmetric systems. Building on recent evidence that bulk wz-HgTe is a noncentrosymmetric Dirac semimetal, we investigate how strain and quantum confinement reshape its topology. To this end, we combine density-functional theory, semiempirical tight-binding, and k · p approaches. Bulk wz-HgTe hosts two Dirac points along the Γ – A line, i.e., along the c axis, located only 37 meV above the Fermi level, indicating that the Dirac regime should be experimentally accessible by doping or electrostatic gating. We show that biaxial strain drives a sequence of topological phase transitions from a Dirac semimetal to a three-dimensional topological insulator and eventually to a multiband metal. In (0001) thin films, quantum confinement induces oscillatory transitions between trivial and topological insulating phases. We demonstrate that this behavior is governed not only by the underlying s – p band inversion, but also by the crystal-field splitting specific to the wurtzite structure and by the presence of bulk Dirac points. In contrast, (1-100) films exhibit a single topological transition and, above a critical thickness, develop surface states forming Fermi-arc-like contours that connect the projections of the Dirac points in the two-dimensional Brillouin zone. In the same weak-confinement regime, semimetallic nanowires oriented along the c axis are predicted to host localized edge states that should be accessible to transport measurements or scanning tunneling spectroscopy. These results establish the topological phase diagram of wz-HgTe beyond the strong-confinement regime explored so far and reveal how crystal symmetry, inversion breaking, strain, and confinement combine to reshape the topology of a Dirac material. More broadly, they identify wurtzite HgTe as a promising platform for engineering topological phases in experimentally relevant nanostructures.
SN  - 2643-1564
SN  - 2643-1564
ER  -