4 MV/cm (010) β-Ga2O3 Heterojunction Diodes Realized by Low-Damage e-Beam NiOx Interlayers
Abstract
We report on the utilization of a low-damage e-beam NiOx deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) β-Ga2O3 films with high critical breakdown field strengths beyond 4 MV/cm and power figure of merits (PFOM) of >1 GW/cm2. Diodes were fabricated on a 2.67 × 1016 cm−3 intentionally doped 6.2 μm thick epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) on a conductive Sn-doped β-Ga2O3 (010) substrate using TMGa, O2, Ar carrier gas, and SiH4 as the silicon dopant source. The mesa etched FP-HJD devices utilized a thin 7 nm e-beam NiOx interlayer before the sputtered NiOx layers to eliminate the effects of sputter-induced ion damage on the (010) epilayers. Current-Voltage measurements resulted in a forward current density of 700 A/cm2 at 4 V, HJD ideality factor of 1.29, a Vbi of 2 V, rectification ratio of 1011, and a differential specific on resistance (Ron,sp) value of 2.36 mΩ × cm2. Breakdown of the (010) FP-HJDs was 1.64 kV, leading to a parallel plane electric field at breakdown (E||,max) of 4.02 MV/cm and a PFOM of 1.14 GW/cm2, which is a state-of-the-art result for diodes on MOCVD-grown (010) drift layers.
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BibTeX
@misc{peterson2026mvcm,
title = {{4 MV/cm (010) $β$-Ga$_2$O$_3$ Heterojunction Diodes Realized by Low-Damage e-Beam NiO$_x$ Interlayers}},
author = {Carl Peterson and Yizheng Liu and Chinmoy Nath Saha and Rachel Kahler and Akhila Mattapalli and Sriram Krishnamoorthy},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.04655},
eprint = {2609.04655},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.04655},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - 4 MV/cm (010) β-Ga_2O_3 Heterojunction Diodes Realized by Low-Damage e-Beam NiO_x Interlayers
AU - Carl Peterson
AU - Yizheng Liu
AU - Chinmoy Nath Saha
AU - Rachel Kahler
AU - Akhila Mattapalli
AU - Sriram Krishnamoorthy
PY - 2026
DA - 2026/09/04
PB - arXiv
DO - 10.48550/arxiv.2609.04655
UR - https://arxiv.org/abs/2609.04655
AB - We report on the utilization of a low-damage e-beam NiO_x deposition process to realize field-plated heterojunction diodes (FP-HJDs) on (010) β-Ga_2O_3 films with high critical breakdown field strengths beyond 4 MV/cm and power figure of merits (PFOM) of >1 GW/cm^2. Diodes were fabricated on a 2.67 × 10^16 cm^−3 intentionally doped 6.2 μm thick epitaxial layer grown by metalorganic chemical vapor deposition (MOCVD) on a conductive Sn-doped β-Ga_2O_3 (010) substrate using TMGa, O_2, Ar carrier gas, and SiH_4 as the silicon dopant source. The mesa etched FP-HJD devices utilized a thin 7 nm e-beam NiO_x interlayer before the sputtered NiO_x layers to eliminate the effects of sputter-induced ion damage on the (010) epilayers. Current-Voltage measurements resulted in a forward current density of 700 A/cm^2 at 4 V, HJD ideality factor of 1.29, a V_bi of 2 V, rectification ratio of 10^11, and a differential specific on resistance (R_on,sp) value of 2.36 mΩ × cm^2. Breakdown of the (010) FP-HJDs was 1.64 kV, leading to a parallel plane electric field at breakdown (E_||,max) of 4.02 MV/cm and a PFOM of 1.14 GW/cm^2, which is a state-of-the-art result for diodes on MOCVD-grown (010) drift layers.
ER -