On the radiation damage tolerance of multilayer and single-layer coatings within the ZrN/SiNx system subjected to helium ion implantation
Abstract
We report on the microstructural evolution of ZrN/SiN x bilayers and multilayers after He ions implantation, comparatively to their monolithic (i.e., ZrN and SiN x ) counterparts. Films with a total thickness of 300 nm are synthesized by reactive magnetron sputtering, and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and time-of-flight elastic recoil detection analysis (ToF-ERDA) in their as-deposited and implanted states (fluence of 7 × 10 16 ions/cm 2 ). The as-deposited multilayer ZrN/SiN x films are characterized by sharp interfaces that delineate amorphous SiN x and polycrystalline ZrN layers. Distinct microstructural evolutions after He implantation are revealed for the constitutive single-layers. The formation of cavities with typical size around 10 nm is observed in SiN x , accompanied by an extensive loss of He. For monolithic ZrN, the implanted He does not induce any visible extended defects, but causes lattice distortion, especially in <111>-oriented grains. The presence of interfaces does not significantly alter the overall radiation damage response (in relation to monolithic films), resulting in a relative macroscopic swelling of 10–15% for bilayer periods Λ between 8 and 42 nm. A detailed TEM investigation performed on the implanted multilayer with Λ = 20 nm reveals different depth-profiles of individual layer thickness expansion, originating from the He concentration profile for ZrN and damage profile for SiN x . ZrN monolithic films, characterized by a columnar growth morphology and exempt of He-induced cavities, show the best radiation resistance.
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BibTeX
@article{senicourt2026radiation,
title = {{On the radiation damage tolerance of multilayer and single-layer coatings within the ZrN/SiNx system subjected to helium ion implantation}},
author = {N. Sénicourt and M.-L. David and K. Mizohata and F. Pailloux and K. Sarakinos and C. Tromas and Ph. Djemia and Grégory Abadias},
journal = {Surface and Coatings Technology},
year = {2026},
month = sep,
doi = {10.1016/j.surfcoat.2026.133510},
url = {https://cnrs.hal.science/hal-05766191v1},
note = {CC BY},
}
RIS
TY - JOUR
TI - On the radiation damage tolerance of multilayer and single-layer coatings within the ZrN/SiNx system subjected to helium ion implantation
AU - N. Sénicourt
AU - M.-L. David
AU - K. Mizohata
AU - F. Pailloux
AU - K. Sarakinos
AU - C. Tromas
AU - Ph. Djemia
AU - Grégory Abadias
PY - 2026
DA - 2026/09/27
JO - Surface and Coatings Technology
DO - 10.1016/j.surfcoat.2026.133510
UR - https://cnrs.hal.science/hal-05766191v1
AB - We report on the microstructural evolution of ZrN/SiN x bilayers and multilayers after He ions implantation, comparatively to their monolithic (i.e., ZrN and SiN x ) counterparts. Films with a total thickness of 300 nm are synthesized by reactive magnetron sputtering, and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and time-of-flight elastic recoil detection analysis (ToF-ERDA) in their as-deposited and implanted states (fluence of 7 × 10 16 ions/cm 2 ). The as-deposited multilayer ZrN/SiN x films are characterized by sharp interfaces that delineate amorphous SiN x and polycrystalline ZrN layers. Distinct microstructural evolutions after He implantation are revealed for the constitutive single-layers. The formation of cavities with typical size around 10 nm is observed in SiN x , accompanied by an extensive loss of He. For monolithic ZrN, the implanted He does not induce any visible extended defects, but causes lattice distortion, especially in <111>-oriented grains. The presence of interfaces does not significantly alter the overall radiation damage response (in relation to monolithic films), resulting in a relative macroscopic swelling of 10–15% for bilayer periods Λ between 8 and 42 nm. A detailed TEM investigation performed on the implanted multilayer with Λ = 20 nm reveals different depth-profiles of individual layer thickness expansion, originating from the He concentration profile for ZrN and damage profile for SiN x . ZrN monolithic films, characterized by a columnar growth morphology and exempt of He-induced cavities, show the best radiation resistance.
SN - 0257-8972
SN - 1879-3347
ER -