Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters.
- 1University of Warsaw, Faculty of Physics, Institute of Experimental Physics, Ludwika Pasteura 5, Warsaw 02-093, Poland.
- 2Institute of High Pressure Physics "Unipress", Polish Academy of Sciences, Sokołowska 29/37, Warsaw 01-142, Poland.
Abstract
Defect centers in gallium nitride (GaN) emerge as bright sources of single photons, which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation techniques have not been a subject of thorough studies. This work presents evidence that by tuning the excitation laser energy to specific resonance values, the excitation efficiency can be enhanced, resulting in a relative increase of photoluminescence intensity by up to an order of magnitude. The resonances can be selectively addressed with linearly polarized light, while the emission dipoles remain unchanged, enabling polarization-controlled enhancement. These results establish an efficient method of excitation for GaN-based emitters, thereby increasing the generation rate of photons. The data are consistent with excitation via localized vibrational modes (LVMs) associated with point-defect complexes, establishing a practical quasi-resonant route to brighter, polarization-addressable operation of GaN defect emitters and clarifying their energy-level structure.
Related
- Surfactant-Induced Interfacial Anisotropy Governs Polarization-Selective Whispering Gallery Mode Excitation in Dye-Doped Trapped Microdroplets
- Pump-probe interferometry of picosecond superradiance under direct resonant excitation
- Pole Skipping, Avoided Crossing, and Resonant Excitation in Kerr Quasinormal Modes near Algebraically Special Frequencies
- Polarization-encoded photon statistics for counting dipole emitters
- A study of the valence shell photoionization dynamics following core level resonant excitation in imidazole
BibTeX
@article{dalla2026efficient,
title = {{Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters.}},
author = {Nilesh Dalla and Paweł Kulboka and Michał Kobecki and Jan Misiak and Paweł Prystawko and Tomasz Kazimierczuk and Piotr Kossacki and Henryk Turski and Tomasz Jakubczyk},
journal = {ACS photonics},
year = {2026},
month = oct,
doi = {10.1021/acsphotonics.6c02170},
url = {https://europepmc.org/article/MED/42997567},
note = {CC BY},
}
RIS
TY - JOUR
TI - Efficient Quasi-Resonant, Polarization-Selective Excitation of GaN Quantum Emitters.
AU - Nilesh Dalla
AU - Paweł Kulboka
AU - Michał Kobecki
AU - Jan Misiak
AU - Paweł Prystawko
AU - Tomasz Kazimierczuk
AU - Piotr Kossacki
AU - Henryk Turski
AU - Tomasz Jakubczyk
PY - 2026
DA - 2026/10/15
JO - ACS photonics
DO - 10.1021/acsphotonics.6c02170
UR - https://europepmc.org/article/MED/42997567
AB - Defect centers in gallium nitride (GaN) emerge as bright sources of single photons, which recently have been demonstrated to optically interface a localized spin. However, the structure and composition of these defects as well as their efficient excitation techniques have not been a subject of thorough studies. This work presents evidence that by tuning the excitation laser energy to specific resonance values, the excitation efficiency can be enhanced, resulting in a relative increase of photoluminescence intensity by up to an order of magnitude. The resonances can be selectively addressed with linearly polarized light, while the emission dipoles remain unchanged, enabling polarization-controlled enhancement. These results establish an efficient method of excitation for GaN-based emitters, thereby increasing the generation rate of photons. The data are consistent with excitation via localized vibrational modes (LVMs) associated with point-defect complexes, establishing a practical quasi-resonant route to brighter, polarization-addressable operation of GaN defect emitters and clarifying their energy-level structure.
SN - 2330-4022
ER -