Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
Abstract
Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe is a narrow bandgap semiconductor with advantageous (opto)electronic properties that has been shown to have a desirable defect-tolerance, enabling bright emission even when grown on highly-dissimilar platforms, and could be leveraged in combination with selective growth for site-selective quantum emitters and low-disorder hybrid nanowire networks. In this work, we achieve site-selective growth of well-faceted and ordered PbSe nanostructures, despite a large 8% lattice mismatch. Structural and morphological characterization reveal that >99% of selectively grown islands within 100 nm opening are single-orientation and cube-on-cube oriented with sub-nm root-mean-square surface roughness. Defect analysis showed that 74% of the islands and 86% of the coalesced regions between different mask openings were free of threading dislocations. These PbSe islands achieved equivalent emission in the mid-infrared despite having a higher surface-to-volume ratio than the planar control. Further, we present a gate-tunable two-terminal Josephson junction fabricated from the PbSe nanowires grown with conditions identified in this study. The combination of the accessible selective growth regime, morphological control of island growth and demonstrations of optical and electrical transport properties indicates promise for PbSe SAG as a defect-tolerant scalable quantum platform.
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BibTeX
@misc{garcia2026highly,
title = {{Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs}},
author = {Ashlee M. García and Hosni A. Kaissi and Jarod E. Meyer and Kira J. Martin and Maksim Gomanko and Laura A. Stern and Pooja D. Reddy and SeongJin Park and Wilson J. Yánez-Parreño and Sergey M. Frolov and Vlad S. Pribiag and Kunal Mukherjee},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.22650},
eprint = {2609.22650},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.22650},
}
RIS
TY - UNPB
TI - Highly Lattice-Mismatched Selective Area Epitaxy and Coalescence of PbSe Nanostructures on GaAs
AU - Ashlee M. García
AU - Hosni A. Kaissi
AU - Jarod E. Meyer
AU - Kira J. Martin
AU - Maksim Gomanko
AU - Laura A. Stern
AU - Pooja D. Reddy
AU - SeongJin Park
AU - Wilson J. Yánez-Parreño
AU - Sergey M. Frolov
AU - Vlad S. Pribiag
AU - Kunal Mukherjee
PY - 2026
DA - 2026/09/18
PB - arXiv
DO - 10.48550/arxiv.2609.22650
UR - https://arxiv.org/abs/2609.22650
AB - Selective area growth of PbSe has the potential to realize deterministic placement of high-density, defect-tolerant nanostructure networks toward a scalable quantum platform. PbSe is a narrow bandgap semiconductor with advantageous (opto)electronic properties that has been shown to have a desirable defect-tolerance, enabling bright emission even when grown on highly-dissimilar platforms, and could be leveraged in combination with selective growth for site-selective quantum emitters and low-disorder hybrid nanowire networks. In this work, we achieve site-selective growth of well-faceted and ordered PbSe nanostructures, despite a large 8% lattice mismatch. Structural and morphological characterization reveal that >99% of selectively grown islands within 100 nm opening are single-orientation and cube-on-cube oriented with sub-nm root-mean-square surface roughness. Defect analysis showed that 74% of the islands and 86% of the coalesced regions between different mask openings were free of threading dislocations. These PbSe islands achieved equivalent emission in the mid-infrared despite having a higher surface-to-volume ratio than the planar control. Further, we present a gate-tunable two-terminal Josephson junction fabricated from the PbSe nanowires grown with conditions identified in this study. The combination of the accessible selective growth regime, morphological control of island growth and demonstrations of optical and electrical transport properties indicates promise for PbSe SAG as a defect-tolerant scalable quantum platform.
ER -