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Peer-reviewedCC BY-NC-NDACS nano

Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.

5 affiliations
  1. 1Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California92697, United States.
  2. 2Department of Physics, Yonsei University, Seoul03722, Korea.
  3. 3Department of Physics and Center for Nano Materials, Sogang University, Seoul04107, Korea.
  4. 4Department of Optical Engineering, Kongju National University, Cheonan31080, Korea.
  5. 5Department of Materials Science and Engineering, University of California, Irvine, Irvine, California92697, United States.

Abstract

In-plane anisotropy of 2D materials and their heterostructures provides an essential degree of freedom for enabling direction-selective physical responses. However, realizing anisotropic optical responses in interlayer exciton (ILE) of type-II van der Waals heterostructures has remained elusive, as most heterostructures rely on high-symmetry group-VI transition metal dichalcogenides, and attempts to introduce low-symmetry layers are hindered by interlayer momentum mismatch leading to inefficient radiative recombination. Here, we demonstrate anisotropic ILE emission in ReS2/WS2 enabled by Γ-point momentum matching. Polarization-resolved photoluminescence (PL) reveals three distinct ILE peaks, appearing at 1.37-1.42 eV for 1L-ReS2/2L-WS2 and 1.32-1.37 eV for 2L-ReS2/2L-WS2. Time-resolved, power- and temperature-dependent PL measurements, together with first-principles many-body calculations, confirm strongly anisotropic interlayer excitons from a direct Γ-point interlayer bandgap. Furthermore, ILE intensity is independent of excitation polarization due to dominant WS2 absorption, providing a stable exciton supply for exciton transport. These findings position momentum-matched anisotropic-isotropic heterostructures as a platform for polarization-selective optoelectronics and anisotropic excitonics.

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BibTeX
@article{yun2026anisotropic,
  title = {{Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.}},
  author = {Tae Keun Yun and Byeongchan Lee and Soyeong Kwon and Jieun Yeon and Doohee Cho and Young Woo Choi and Kwanpyo Kim and SungWoo Nam},
  journal = {ACS nano},
  year = {2026},
  month = sep,
  doi = {10.1021/acsnano.6c11574},
  url = {https://europepmc.org/article/MED/42915760},
  note = {CC BY-NC-ND},
}
RIS
TY  - JOUR
TI  - Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.
AU  - Tae Keun Yun
AU  - Byeongchan Lee
AU  - Soyeong Kwon
AU  - Jieun Yeon
AU  - Doohee Cho
AU  - Young Woo Choi
AU  - Kwanpyo Kim
AU  - SungWoo Nam
PY  - 2026
DA  - 2026/09/01
JO  - ACS nano
DO  - 10.1021/acsnano.6c11574
UR  - https://europepmc.org/article/MED/42915760
AB  - In-plane anisotropy of 2D materials and their heterostructures provides an essential degree of freedom for enabling direction-selective physical responses. However, realizing anisotropic optical responses in interlayer exciton (ILE) of type-II van der Waals heterostructures has remained elusive, as most heterostructures rely on high-symmetry group-VI transition metal dichalcogenides, and attempts to introduce low-symmetry layers are hindered by interlayer momentum mismatch leading to inefficient radiative recombination. Here, we demonstrate anisotropic ILE emission in ReS2/WS2 enabled by Γ-point momentum matching. Polarization-resolved photoluminescence (PL) reveals three distinct ILE peaks, appearing at 1.37-1.42 eV for 1L-ReS2/2L-WS2 and 1.32-1.37 eV for 2L-ReS2/2L-WS2. Time-resolved, power- and temperature-dependent PL measurements, together with first-principles many-body calculations, confirm strongly anisotropic interlayer excitons from a direct Γ-point interlayer bandgap. Furthermore, ILE intensity is independent of excitation polarization due to dominant WS2 absorption, providing a stable exciton supply for exciton transport. These findings position momentum-matched anisotropic-isotropic heterostructures as a platform for polarization-selective optoelectronics and anisotropic excitonics.
SN  - 1936-0851
SN  - 1936-086X
ER  -