Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.
5 affiliations
- 1Department of Mechanical and Aerospace Engineering, University of California, Irvine, Irvine, California92697, United States.
- 2Department of Physics, Yonsei University, Seoul03722, Korea.
- 3Department of Physics and Center for Nano Materials, Sogang University, Seoul04107, Korea.
- 4Department of Optical Engineering, Kongju National University, Cheonan31080, Korea.
- 5Department of Materials Science and Engineering, University of California, Irvine, Irvine, California92697, United States.
Abstract
In-plane anisotropy of 2D materials and their heterostructures provides an essential degree of freedom for enabling direction-selective physical responses. However, realizing anisotropic optical responses in interlayer exciton (ILE) of type-II van der Waals heterostructures has remained elusive, as most heterostructures rely on high-symmetry group-VI transition metal dichalcogenides, and attempts to introduce low-symmetry layers are hindered by interlayer momentum mismatch leading to inefficient radiative recombination. Here, we demonstrate anisotropic ILE emission in ReS2/WS2 enabled by Γ-point momentum matching. Polarization-resolved photoluminescence (PL) reveals three distinct ILE peaks, appearing at 1.37-1.42 eV for 1L-ReS2/2L-WS2 and 1.32-1.37 eV for 2L-ReS2/2L-WS2. Time-resolved, power- and temperature-dependent PL measurements, together with first-principles many-body calculations, confirm strongly anisotropic interlayer excitons from a direct Γ-point interlayer bandgap. Furthermore, ILE intensity is independent of excitation polarization due to dominant WS2 absorption, providing a stable exciton supply for exciton transport. These findings position momentum-matched anisotropic-isotropic heterostructures as a platform for polarization-selective optoelectronics and anisotropic excitonics.
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BibTeX
@article{yun2026anisotropic,
title = {{Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.}},
author = {Tae Keun Yun and Byeongchan Lee and Soyeong Kwon and Jieun Yeon and Doohee Cho and Young Woo Choi and Kwanpyo Kim and SungWoo Nam},
journal = {ACS nano},
year = {2026},
month = sep,
doi = {10.1021/acsnano.6c11574},
url = {https://europepmc.org/article/MED/42915760},
note = {CC BY-NC-ND},
}
RIS
TY - JOUR
TI - Anisotropic Γ-Valley Interlayer Excitonic Emission in Anisotropic-Isotropic 2D Heterostructures.
AU - Tae Keun Yun
AU - Byeongchan Lee
AU - Soyeong Kwon
AU - Jieun Yeon
AU - Doohee Cho
AU - Young Woo Choi
AU - Kwanpyo Kim
AU - SungWoo Nam
PY - 2026
DA - 2026/09/01
JO - ACS nano
DO - 10.1021/acsnano.6c11574
UR - https://europepmc.org/article/MED/42915760
AB - In-plane anisotropy of 2D materials and their heterostructures provides an essential degree of freedom for enabling direction-selective physical responses. However, realizing anisotropic optical responses in interlayer exciton (ILE) of type-II van der Waals heterostructures has remained elusive, as most heterostructures rely on high-symmetry group-VI transition metal dichalcogenides, and attempts to introduce low-symmetry layers are hindered by interlayer momentum mismatch leading to inefficient radiative recombination. Here, we demonstrate anisotropic ILE emission in ReS2/WS2 enabled by Γ-point momentum matching. Polarization-resolved photoluminescence (PL) reveals three distinct ILE peaks, appearing at 1.37-1.42 eV for 1L-ReS2/2L-WS2 and 1.32-1.37 eV for 2L-ReS2/2L-WS2. Time-resolved, power- and temperature-dependent PL measurements, together with first-principles many-body calculations, confirm strongly anisotropic interlayer excitons from a direct Γ-point interlayer bandgap. Furthermore, ILE intensity is independent of excitation polarization due to dominant WS2 absorption, providing a stable exciton supply for exciton transport. These findings position momentum-matched anisotropic-isotropic heterostructures as a platform for polarization-selective optoelectronics and anisotropic excitonics.
SN - 1936-0851
SN - 1936-086X
ER -