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Peer-reviewedCC BY-NC-ND 4.0Communications Engineering

A robust GaN p-FET with unconventional electron conduction

  • Mohit Kumar1
  • Laurent Xu1
  • Timothée labau1,2
  • Jérôme Biscarrat1
  • Simona Torrengo1
  • Christophe Lecouvey1
  • Matthew Charles1
  • Caroline Elias1
  • Aurélien Olivier1
  • Estelle Chanel Petitjean1
  • Zineb Saghi1
  • Joelle Zgheib1
2 more authors
  • René Escoffier1
  • Julien Buckley1
  1. 1Univ. Grenoble Alpes, CEA, Leti, Grenoble, France
  2. 2Delphea, Montpellier, France
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Abstract

GaN p-channel field-effect transistors (p-FETs) are critical for enabling complementary integration of power and logic, while offering high breakdown capability. However, achieving high on-current in GaN p-FETs remains a significant challenge, primarily due to the low hole concentration, poor mobility, and challenges in forming stable, low-resistance ohmic contacts. Here, we present a novel GaN p-FET architecture that exhibits unconventional electron conduction, which helps enhance both thermal response and current modulation. We conduct a comprehensive investigation of heavily Mg-doped p++-GaN layers, focusing on contact optimization for high-temperature operation. Structural and interfacial characterization confirms high crystal quality and a thermally robust Ni/Au contact stack stabilized by an interfacial NixOy layer. This strategic interfacial layer, combined with moderate-temperature annealing, promotes Mg activation and suppresses oxygen-related traps, resulting in a ~ 73% reduction in contact resistance. Temperature-dependent analysis further reveals non-monotonic Schottky barrier modulation driven by interface evolution. Integrated into the device, this contact strategy enables thermally enhanced operation, with a drastically increase in on-state current and threshold voltage shifting positively by ~ 69% with temperature. These findings highlight a model shift in GaN p-FET design, where interface study and transport-mode innovation enable high-performance, thermally resilient devices for next-generation power integration.

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Cite

BibTeXRIS
BibTeX
@article{kumar2026robust,
  title = {{A robust GaN p-FET with unconventional electron conduction}},
  author = {Mohit Kumar and Laurent Xu and Timothée labau and Jérôme Biscarrat and Simona Torrengo and Christophe Lecouvey and Matthew Charles and Caroline Elias and Aurélien Olivier and Estelle Chanel Petitjean and Zineb Saghi and Joelle Zgheib and René Escoffier and Julien Buckley},
  journal = {Communications Engineering},
  year = {2026},
  month = jul,
  doi = {10.1038/s44172-026-00717-1},
  url = {https://doi.org/10.1038/s44172-026-00717-1},
  note = {CC BY-NC-ND 4.0},
}
RIS
TY  - JOUR
TI  - A robust GaN p-FET with unconventional electron conduction
AU  - Mohit Kumar
AU  - Laurent Xu
AU  - Timothée labau
AU  - Jérôme Biscarrat
AU  - Simona Torrengo
AU  - Christophe Lecouvey
AU  - Matthew Charles
AU  - Caroline Elias
AU  - Aurélien Olivier
AU  - Estelle Chanel Petitjean
AU  - Zineb Saghi
AU  - Joelle Zgheib
AU  - René Escoffier
AU  - Julien Buckley
PY  - 2026
DA  - 2026/07/03
JO  - Communications Engineering
DO  - 10.1038/s44172-026-00717-1
UR  - https://doi.org/10.1038/s44172-026-00717-1
AB  - GaN p-channel field-effect transistors (p-FETs) are critical for enabling complementary integration of power and logic, while offering high breakdown capability. However, achieving high on-current in GaN p-FETs remains a significant challenge, primarily due to the low hole concentration, poor mobility, and challenges in forming stable, low-resistance ohmic contacts. Here, we present a novel GaN p-FET architecture that exhibits unconventional electron conduction, which helps enhance both thermal response and current modulation. We conduct a comprehensive investigation of heavily Mg-doped p++-GaN layers, focusing on contact optimization for high-temperature operation. Structural and interfacial characterization confirms high crystal quality and a thermally robust Ni/Au contact stack stabilized by an interfacial NixOy layer. This strategic interfacial layer, combined with moderate-temperature annealing, promotes Mg activation and suppresses oxygen-related traps, resulting in a ~ 73% reduction in contact resistance. Temperature-dependent analysis further reveals non-monotonic Schottky barrier modulation driven by interface evolution. Integrated into the device, this contact strategy enables thermally enhanced operation, with a drastically increase in on-state current and threshold voltage shifting positively by ~ 69% with temperature. These findings highlight a model shift in GaN p-FET design, where interface study and transport-mode innovation enable high-performance, thermally resilient devices for next-generation power integration.
SN  - 2731-3395
ER  -