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PreprintCC BYChemRxiv

Ultra-thin WS2 growth by ALD from bis(tert-butylimido)bis(dimethylamido)tungsten and 1,2-ethanedithiol and detailed surface mechanism

  • Zakaria Qoraiche1
  • Medet Zhukush2
  • Jules Galipaud3,4
  • Laurent Veyre2
  • Kai Szeto2
  • Mimoun Aouine1
  • Lhoussain Khrouz5,6
  • Clément Camp2
  • Elsje Alessandra Quadrelli1
6 affiliations
  1. 1IRCELYON – UMR 5256, Universite Claude Bernard Lyon 1, CNRS, 2 Avenue Albert Einstein, Villeurbanne Cedex, France, 69626
  2. 2Laboratory of Catalysis, Polymerization, Processes and Materials (CP2M UMR 5128), CNRS, CPE Lyon, 43 Bd du 11 Novembre 1918, Villeurbanne, France, 69616
  3. 3CNRS, LTDS (UMR5513), Ecole Centrale de Lyon, Université de Lyon, - 36 Av. Guy de Collongue, Ecully, France, 69130
  4. 4CNRS, MATEIS (UMR5510), INSA de Lyon, Universite Claude Bernard Lyon, 7 avenue Jean Capelle, Villeurbanne, 69621
  5. 5Chemistry laboratory
  6. 6ENS Lyon 46 allée d’Italie
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Abstract

A molecular layer deposition/atomic layer deposition (MLD/ALD) strategy using bis(tert-butylimido)bis(dimethylamido)tungsten (BTBMW) and 1,2-ethanedithiol (EDT), the latter serving as a safer organic alternative to H2S, leads to the formation of ultrathin WS2 films via a molecular/hybrid tungsten organothiolate intermediate. A multiscale approach, involving Si/SiO2 wafers, silica nanobeads, and molecular models, provides mechanistic insight into the early stages of growth. It reveals a complex surface chemistry involving ligand exchange, partial reduction of tungsten, and degrafting processes with regeneration of Si-OH groups. Despite this complexity, the process evolves toward a self-limiting and reproducible growth regime. Annealing studies on Si/SiO2 wafers and silica nanobeads allow tracking the transformation of the organothiolate intermediate into crystalline WS2 and confirm that WS2 formation proceeds through a progressive and controlled conversion of the deposited phase into lamellar WS2 domains. The mechanistic study also suggests that the degrafting-induced mobility of thiolate species during deposition may contribute to the lateral growth observed during annealing.

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Cite

BibTeXRIS
BibTeX
@misc{qoraiche2026ultrathin,
  title = {{Ultra-thin WS2 growth by ALD from bis(tert-butylimido)bis(dimethylamido)tungsten and 1,2-ethanedithiol and detailed surface mechanism}},
  author = {Zakaria Qoraiche and Medet Zhukush and Jules Galipaud and Laurent Veyre and Kai Szeto and Mimoun Aouine and Lhoussain Khrouz and Clément Camp and Elsje Alessandra Quadrelli},
  howpublished = {ChemRxiv},
  year = {2026},
  month = sep,
  doi = {10.26434/chemrxiv.15009219/v1},
  url = {https://chemrxiv.org/doi/full/10.26434/chemrxiv.15009219/v1},
  note = {CC BY},
}
RIS
TY  - UNPB
TI  - Ultra-thin WS2 growth by ALD from bis(tert-butylimido)bis(dimethylamido)tungsten and 1,2-ethanedithiol and detailed surface mechanism
AU  - Zakaria Qoraiche
AU  - Medet Zhukush
AU  - Jules Galipaud
AU  - Laurent Veyre
AU  - Kai Szeto
AU  - Mimoun Aouine
AU  - Lhoussain Khrouz
AU  - Clément Camp
AU  - Elsje Alessandra Quadrelli
PY  - 2026
DA  - 2026/09/21
PB  - ChemRxiv
DO  - 10.26434/chemrxiv.15009219/v1
UR  - https://chemrxiv.org/doi/full/10.26434/chemrxiv.15009219/v1
AB  - A molecular layer deposition/atomic layer deposition (MLD/ALD) strategy using bis(tert-butylimido)bis(dimethylamido)tungsten (BTBMW) and 1,2-ethanedithiol (EDT), the latter serving as a safer organic alternative to H2S, leads to the formation of ultrathin WS2 films via a molecular/hybrid tungsten organothiolate intermediate. A multiscale approach, involving Si/SiO2 wafers, silica nanobeads, and molecular models, provides mechanistic insight into the early stages of growth. It reveals a complex surface chemistry involving ligand exchange, partial reduction of tungsten, and degrafting processes with regeneration of Si-OH groups. Despite this complexity, the process evolves toward a self-limiting and reproducible growth regime. Annealing studies on Si/SiO2 wafers and silica nanobeads allow tracking the transformation of the organothiolate intermediate into crystalline WS2 and confirm that WS2 formation proceeds through a progressive and controlled conversion of the deposited phase into lamellar WS2 domains. The mechanistic study also suggests that the degrafting-induced mobility of thiolate species during deposition may contribute to the lateral growth observed during annealing.
SN  - 2573-2293
ER  -