Ab Initio strain-dependent vibrational analysis of different silicene structures for 2D devices

Abstract

We report first-principles phonon dynamics studies in isotropically strained mono-layer silicene films of various topologies by density functional theory and density functional perturbation theory methods. The strain introduced in the sheets are of both tensile and compressive nature and its effect on the thermal transport properties are analysed using the Boltzmann Transport Equation (BTE) reported. We performed electronic and vibrational analysis of each silicene topology and concluded that hhk-silicene is a potential candidate for next generation electro-thermal devices due its molecular stability, bulk-Si like bandgap and tolerable thermal performance that can be engineered by strain. The novel hhk-silicene topology offers excellent thermal and electronic capabilities that are sensitive to strain along with the band gap following a near-linear monotonically decreasing trend making it suitable for strain-tronics applications.

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BibTeX RIS

BibTeX

@misc{gupta2026initio,
  title = {{Ab Initio strain-dependent vibrational analysis of different silicene structures for 2D devices}},
  author = {Archishman Gupta and Ankit Arora},
  howpublished = {arXiv},
  year = {2026},
  month = nov,
  doi = {10.48550/arxiv.2611.01166},
  eprint = {2611.01166},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2611.01166},
}

RIS

TY  - UNPB
TI  - Ab Initio strain-dependent vibrational analysis of different silicene structures for 2D devices
AU  - Archishman Gupta
AU  - Ankit Arora
PY  - 2026
DA  - 2026/11/01
PB  - arXiv
DO  - 10.48550/arxiv.2611.01166
UR  - https://arxiv.org/abs/2611.01166
AB  - We report first-principles phonon dynamics studies in isotropically strained mono-layer silicene films of various topologies by density functional theory and density functional perturbation theory methods. The strain introduced in the sheets are of both tensile and compressive nature and its effect on the thermal transport properties are analysed using the Boltzmann Transport Equation (BTE) reported. We performed electronic and vibrational analysis of each silicene topology and concluded that hhk-silicene is a potential candidate for next generation electro-thermal devices due its molecular stability, bulk-Si like bandgap and tolerable thermal performance that can be engineered by strain. The novel hhk-silicene topology offers excellent thermal and electronic capabilities that are sensitive to strain along with the band gap following a near-linear monotonically decreasing trend making it suitable for strain-tronics applications.
ER  -

Abstract

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