Impact of the phase transition of halide perovskite on the performance of ZnO ultraviolet photoconductor.
- 1School of Engineering and Materials Science, Queen Mary University of London Mile End Road London E1 4NS UK [email protected] [email protected].
Abstract
Despite the limitations associated with the delta-phase perovskite (δ-PVK), its potential to enhance device performance and stability has recently attracted increasing interest. In this work, we investigate the influence of these properties on the performance of ZnO-based ultraviolet (UV) photoconductors by surface-modifying the ZnO active layer with a δ-PVK layer derived from the phase transition of alpha-phase triple-cation mixed-halide perovskite, (Cs0.05FA0.81MA0.14)Pb(I0.85Br0.15)₃ (α-PVK), via solution processing. The resulting ZnO/δ-PVK UV photoconductor exhibits enhanced performance, which is attributed to effective interfacial charge transfer from δ-PVK to ZnO, accompanied by an enhanced photogating effect. Compared with the ZnO device, the ZnO/δ-PVK device exhibits a photocurrent (I photo) ca. 3 times higher, while being ca. 2 orders of magnitude higher than that of the ZnO/α-PVK device. Accordingly, the ZnO/δ-PVK device achieves the highest I on/I off ratio (344.81), photoresponsivity (R = 2.0 A W⁻¹), photodetectivity (D* = 3.06 × 10¹¹ Jones) and external quantum efficiency (EQE = 680%) under 365 nm UV irradiation at a power density (P) of 23 mW cm⁻² and a bias voltage of 1 V. These findings highlight the potential of the previously underexplored δ-PVK phase for enhancing the performance of optoelectronic devices.
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BibTeX
@article{igbari2026impact,
title = {{Impact of the phase transition of halide perovskite on the performance of ZnO ultraviolet photoconductor.}},
author = {Femi Igbari and Muhammad Bilal and Zhe Li},
journal = {RSC advances},
year = {2026},
month = oct,
doi = {10.1039/d6ra08487g},
url = {https://europepmc.org/article/MED/42899092},
note = {CC BY},
}
RIS
TY - JOUR
TI - Impact of the phase transition of halide perovskite on the performance of ZnO ultraviolet photoconductor.
AU - Femi Igbari
AU - Muhammad Bilal
AU - Zhe Li
PY - 2026
DA - 2026/10/19
JO - RSC advances
DO - 10.1039/d6ra08487g
UR - https://europepmc.org/article/MED/42899092
AB - Despite the limitations associated with the delta-phase perovskite (δ-PVK), its potential to enhance device performance and stability has recently attracted increasing interest. In this work, we investigate the influence of these properties on the performance of ZnO-based ultraviolet (UV) photoconductors by surface-modifying the ZnO active layer with a δ-PVK layer derived from the phase transition of alpha-phase triple-cation mixed-halide perovskite, (Cs0.05FA0.81MA0.14)Pb(I0.85Br0.15)₃ (α-PVK), via solution processing. The resulting ZnO/δ-PVK UV photoconductor exhibits enhanced performance, which is attributed to effective interfacial charge transfer from δ-PVK to ZnO, accompanied by an enhanced photogating effect. Compared with the ZnO device, the ZnO/δ-PVK device exhibits a photocurrent (I photo) ca. 3 times higher, while being ca. 2 orders of magnitude higher than that of the ZnO/α-PVK device. Accordingly, the ZnO/δ-PVK device achieves the highest I on/I off ratio (344.81), photoresponsivity (R = 2.0 A W⁻¹), photodetectivity (D* = 3.06 × 10¹¹ Jones) and external quantum efficiency (EQE = 680%) under 365 nm UV irradiation at a power density (P) of 23 mW cm⁻² and a bias voltage of 1 V. These findings highlight the potential of the previously underexplored δ-PVK phase for enhancing the performance of optoelectronic devices.
SN - 2046-2069
ER -