Direct growth of crystalline spinel GaON films: A wide-bandgap mixed-anion semiconductor
Abstract
Mixed-anion semiconductors offer opportunities for bandgap engineering beyond conventional multication alloys, but competing phases and disorder complicate their synthesis and the identification of their electronic properties. Gallium oxynitride (GaON) could connect the technologically important GaN and Ga2O3 systems, yet establishing a clear relation between its crystal structure, composition and bandgap remains challenging. Here we report the direct growth of crystalline spinel gamma-GaON films by nitrogen-plasma-assisted pulsed-laser deposition. Varying the nitrogen and oxygen supply yields monoclinic beta-Ga2O3, predominantly disordered films and crystalline spinel GaON. Complementary diffraction, atomic-resolution microscopy and elemental analysis establish the spinel structure and nitrogen incorporation. Temperature-dependent photocurrent spectroscopy reveals a clear redshift of the crystalline gamma-GaON response, supporting assignment of a band-edge transition near 4.3 eV at room temperature. These results open opportunities to investigate mixed-anion wide-bandgap semiconductor physics and develop heterostructures.
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BibTeX
@misc{li2026direct,
title = {{Direct growth of crystalline spinel GaON films: A wide-bandgap mixed-anion semiconductor}},
author = {Baikui Li and Zecheng Yang and Wenhao Yin and Zijing Wu and Haitao Zhao and Yunwei Sheng and Honglei Wu and Jiannong Wang},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.18550},
eprint = {2610.18550},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.18550},
note = {CC BY-NC-ND 4.0},
}
RIS
TY - UNPB
TI - Direct growth of crystalline spinel GaON films: A wide-bandgap mixed-anion semiconductor
AU - Baikui Li
AU - Zecheng Yang
AU - Wenhao Yin
AU - Zijing Wu
AU - Haitao Zhao
AU - Yunwei Sheng
AU - Honglei Wu
AU - Jiannong Wang
PY - 2026
DA - 2026/10/13
PB - arXiv
DO - 10.48550/arxiv.2610.18550
UR - https://arxiv.org/abs/2610.18550
AB - Mixed-anion semiconductors offer opportunities for bandgap engineering beyond conventional multication alloys, but competing phases and disorder complicate their synthesis and the identification of their electronic properties. Gallium oxynitride (GaON) could connect the technologically important GaN and Ga2O3 systems, yet establishing a clear relation between its crystal structure, composition and bandgap remains challenging. Here we report the direct growth of crystalline spinel gamma-GaON films by nitrogen-plasma-assisted pulsed-laser deposition. Varying the nitrogen and oxygen supply yields monoclinic beta-Ga2O3, predominantly disordered films and crystalline spinel GaON. Complementary diffraction, atomic-resolution microscopy and elemental analysis establish the spinel structure and nitrogen incorporation. Temperature-dependent photocurrent spectroscopy reveals a clear redshift of the crystalline gamma-GaON response, supporting assignment of a band-edge transition near 4.3 eV at room temperature. These results open opportunities to investigate mixed-anion wide-bandgap semiconductor physics and develop heterostructures.
ER -