Length-Independent Quantum Transport through Engineered Band States in Graphene Nanoribbon Junctions
Abstract
In molecular electronics, the development of molecular wires capable of carrying high electrical current with minimal loss remains a central challenge, despite extensive efforts in both solution-phase and ultrahigh-vacuum synthesis. Graphene nanoribbons (GNRs) with their structural robustness and tunable electronic properties have emerged as promising candidates. In particular, topologically engineered GNRs with atomically precise edge modifications offer new routes for efficient charge transport. Here, we systematically investigate the transport properties of a staggered, edge-extended GNR based on a 7-AGNR backbone, denoted as 7-AGNR-S(1,3), using low-temperature scanning tunneling microscopy liftoff experiments. Under favorable junction conditions, the conductance remains nearly constant during tip retraction over junction lengths exceeding 10 nm, mediated by the low-energy bands arising from the coupled topological zero-energy edge states. Additionally, we developed a detailed model of the liftoff process and simulated charge transport, revealing the roles of delocalized valence band states and showing how local potential variations at the electrode interfaces can modulate molecular-level alignment and conductance. Our findings underscore the importance of interface engineering in the design of high-performance molecular electronic devices.
Related
- End-State-Controlled Quantum Transport in Armchair Graphene Nanoribbon Artificial Quantum Materials
- Quantum transport across normal-superlattice-normal graphene junctions: Fabry-Pérot interference, Hofstadter butterfly, and supersnake states
- Surface-Dependent Phonon Dynamics in 9-Armchair Graphene Nanoribbon Arrays
- Multiproperty Atomistic Characterization of a Synthesized Pyrazinic Nitrogen-Doped Porous Armchair Graphene Nanoribbon
- Topologically protected perfect crossed Andreev reflection in flux-engineered quantum wire junctions
BibTeX
@article{jiang2026lengthindependent,
title = {{Length-Independent Quantum Transport through Engineered Band States in Graphene Nanoribbon Junctions}},
author = {Song Jiang and Fabrice Scheurer and Qiang Sun and Pascal Ruffieux and Xuelin Yao and Akimitsu Narita and Klaus Müllen and Roman Fasel and Thomas Frederiksen and Guillaume Schull},
journal = {ACS Nano},
year = {2026},
month = aug,
doi = {10.1021/acsnano.6c08307},
url = {https://hal.science/hal-05744254v1},
note = {CC BY 4.0},
}
RIS
TY - JOUR
TI - Length-Independent Quantum Transport through Engineered Band States in Graphene Nanoribbon Junctions
AU - Song Jiang
AU - Fabrice Scheurer
AU - Qiang Sun
AU - Pascal Ruffieux
AU - Xuelin Yao
AU - Akimitsu Narita
AU - Klaus Müllen
AU - Roman Fasel
AU - Thomas Frederiksen
AU - Guillaume Schull
PY - 2026
DA - 2026/08/19
JO - ACS Nano
DO - 10.1021/acsnano.6c08307
UR - https://hal.science/hal-05744254v1
AB - In molecular electronics, the development of molecular wires capable of carrying high electrical current with minimal loss remains a central challenge, despite extensive efforts in both solution-phase and ultrahigh-vacuum synthesis. Graphene nanoribbons (GNRs) with their structural robustness and tunable electronic properties have emerged as promising candidates. In particular, topologically engineered GNRs with atomically precise edge modifications offer new routes for efficient charge transport. Here, we systematically investigate the transport properties of a staggered, edge-extended GNR based on a 7-AGNR backbone, denoted as 7-AGNR-S(1,3), using low-temperature scanning tunneling microscopy liftoff experiments. Under favorable junction conditions, the conductance remains nearly constant during tip retraction over junction lengths exceeding 10 nm, mediated by the low-energy bands arising from the coupled topological zero-energy edge states. Additionally, we developed a detailed model of the liftoff process and simulated charge transport, revealing the roles of delocalized valence band states and showing how local potential variations at the electrode interfaces can modulate molecular-level alignment and conductance. Our findings underscore the importance of interface engineering in the design of high-performance molecular electronic devices.
SN - 1936-0851
SN - 1936-086X
ER -