Geometric tailoring of domain wall traps and diodes in ferromagnetic nanostripes
Abstract
Geometric tailoring of magnetic responses is a central theme in modern magnetism. By employing cross-sectional geometric modulation, we investigate how geometric variations influence the dynamics of field-driven domain walls. This approach enables the realization of a domain-wall trap, achieved through a nanostripe constriction, and a domain-wall diode, realized via a wedge-shaped expansion. We demonstrate that domain walls can be efficiently pinned by cross-sectional modulation, with the depinning field exhibiting strong dependence on the cross-sectional gradient. Under weak applied fields, the domain wall undergoes localized oscillations near the pinning site; under strong fields, this pinning breaks down, reproducing the typical diode characteristics. Theoretical calculations based on a biaxial ferromagnet model and a collective-variable approach are in excellent agreement with micromagnetic simulations. Finally, we delineate the parameter regime for realistic samples in which these predicted effects are most pronounced.
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BibTeX
@misc{karakuts2026geometric,
title = {{Geometric tailoring of domain wall traps and diodes in ferromagnetic nanostripes}},
author = {Dmytro Karakuts and Kostiantyn V. Yershov and Denis D. Sheka},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.34526},
eprint = {2610.34526},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.34526},
}
RIS
TY - UNPB
TI - Geometric tailoring of domain wall traps and diodes in ferromagnetic nanostripes
AU - Dmytro Karakuts
AU - Kostiantyn V. Yershov
AU - Denis D. Sheka
PY - 2026
DA - 2026/10/25
PB - arXiv
DO - 10.48550/arxiv.2610.34526
UR - https://arxiv.org/abs/2610.34526
AB - Geometric tailoring of magnetic responses is a central theme in modern magnetism. By employing cross-sectional geometric modulation, we investigate how geometric variations influence the dynamics of field-driven domain walls. This approach enables the realization of a domain-wall trap, achieved through a nanostripe constriction, and a domain-wall diode, realized via a wedge-shaped expansion. We demonstrate that domain walls can be efficiently pinned by cross-sectional modulation, with the depinning field exhibiting strong dependence on the cross-sectional gradient. Under weak applied fields, the domain wall undergoes localized oscillations near the pinning site; under strong fields, this pinning breaks down, reproducing the typical diode characteristics. Theoretical calculations based on a biaxial ferromagnet model and a collective-variable approach are in excellent agreement with micromagnetic simulations. Finally, we delineate the parameter regime for realistic samples in which these predicted effects are most pronounced.
ER -