A substrate booster for P-type 2D ferromagnetic semiconductor

Abstract

Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr₂Ge₂Te₆ (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10⁵ with its coercive field H_c of magnetic hysteresis loop tunable by a factor of more than 200%, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.

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BibTeX RIS

BibTeX

@misc{wang2026substrate,
  title = {{A substrate booster for P-type 2D ferromagnetic semiconductor}},
  author = {Hai Wang and Woye Pei and Ridong Cong and Xiaoyan Liu and Yuping Tian and Kenji Watanabe and Teng Yang and Takashi Taniguchi and Xiangru Kong and Weijiang Gong and Guowei Zhou and Xiaoxi Li and Hanwen Wang and Jixuan Wu and Jiezhi Chen and Xiaohong Xu and Tongyao Zhang},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.11015},
  eprint = {2609.11015},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.11015},
}

RIS

TY  - UNPB
TI  - A substrate booster for P-type 2D ferromagnetic semiconductor
AU  - Hai Wang
AU  - Woye Pei
AU  - Ridong Cong
AU  - Xiaoyan Liu
AU  - Yuping Tian
AU  - Kenji Watanabe
AU  - Teng Yang
AU  - Takashi Taniguchi
AU  - Xiangru Kong
AU  - Weijiang Gong
AU  - Guowei Zhou
AU  - Xiaoxi Li
AU  - Hanwen Wang
AU  - Jixuan Wu
AU  - Jiezhi Chen
AU  - Xiaohong Xu
AU  - Tongyao Zhang
PY  - 2026
DA  - 2026/09/10
PB  - arXiv
DO  - 10.48550/arxiv.2609.11015
UR  - https://arxiv.org/abs/2609.11015
AB  - Spin transistors with its both charge and spin properties tuned via electrostatic gating are believed capable for widespread use, which however have proven challenging due to the extreme rareness of their physical base -- magnetic semiconductors. The latter are limited within very few systems including diluted magnetic semiconductors (DMS) and two-dimensional ferromagnetic semiconductors (2D-FMS), and known to suffer from inadequate gate-tunability of their electric and/or magnetic properties. Here, we show a substrate engineering paradigm by interfacing few-layered Cr_2Ge_2Te_6 (FL-CGT) with an antiferromagnetic insulator CrOCl. Owing to the subtle interfacial charge transfer couplings, CGT can be drastically turned from an ambipolar semiconductor into a high performance P-type semiconductor. When cooled below the Curie temperature, the ON-OFF ratio in such substrate-boosted FMS field-effect transistor (FET) reaches 10^5 with its coercive field H_c of magnetic hysteresis loop tunable by a factor of more than 200%, enabling {gate-assisted magnetic switching in the prototype semiconducting spin transistor architecture}. A crossover from critical power-law scaling to a dual power-law behaviour under heavy hole doping was further observed. Our findings {signify} an efficient interfacial charge transfer and electrically modulated magnetic anisotropy energy supported by calculations. This high performance P-type FMS-FET system suggests that active substrate-boosting paradigm might be a powerful path for the investigation of future gate-tunable spintronic devices.
ER  -

Abstract

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