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PreprintarXiv licencearXiv

Directional strain control of magnetism in MnBi2Se4, MnSb2Se4, and MnSb2Te4 freestanding monolayers

  • Swarnava Ghosh
  • Tanvir Sohail
  • Markus Eisenbach
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Abstract

MnBi2Se4, MnSb2Se4, and MnSb2Te$4$ are layered magnetic quantum materials of interest for spintronic and topological electronic applications, where control of magnetic order at the atomic scale is essential. These materials are particularly sensitive to strain. We investigate their strain-dependent magnetism in the monolayer limit using first-principles calculations across the full two-dimensional strain space spanned by independent variations of the two in-plane strain components. Our results show that the Mn-projected local moments depend primarily on the volumetric strain, whereas the magnetic ground state, exchange interactions, magnetocrystalline anisotropy, and ordering temperature show pronounced directional and composition-dependent responses. We also observe strain-induced competition between the phases, with MnBi2Se4, and MnSb2Se4 monolayers exhibiting a more diverse range of competing magnetic states, while MnSb2Te4 monolayer remains ferromagnetic over a larger portion of strain space. MnSb2Te4 also exhibits a substantially larger out-of-plane magnetocrystalline anisotropy, while showing a weaker dependence on strain than the Se-based materials. The calculated magnetic ordering temperature maps further highlight the role of two-dimensional strain to tune thermal magnetic stability in these materials. These results establish magnetoelastic trends across this family of Mn-based chalcogenide monolayers.

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Cite

BibTeXRIS
BibTeX
@misc{ghosh2026directional,
  title = {{Directional strain control of magnetism in MnBi$_2$Se$_4$, MnSb$_2$Se$_4$, and MnSb$_2$Te$_4$ freestanding monolayers}},
  author = {Swarnava Ghosh and Tanvir Sohail and Markus Eisenbach},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.36343},
  eprint = {2609.36343},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.36343},
}
RIS
TY  - UNPB
TI  - Directional strain control of magnetism in MnBi_2Se_4, MnSb_2Se_4, and MnSb_2Te_4 freestanding monolayers
AU  - Swarnava Ghosh
AU  - Tanvir Sohail
AU  - Markus Eisenbach
PY  - 2026
DA  - 2026/09/28
PB  - arXiv
DO  - 10.48550/arxiv.2609.36343
UR  - https://arxiv.org/abs/2609.36343
AB  - MnBi_2Se_4, MnSb_2Se_4, and MnSb_2Te$4$ are layered magnetic quantum materials of interest for spintronic and topological electronic applications, where control of magnetic order at the atomic scale is essential. These materials are particularly sensitive to strain. We investigate their strain-dependent magnetism in the monolayer limit using first-principles calculations across the full two-dimensional strain space spanned by independent variations of the two in-plane strain components. Our results show that the Mn-projected local moments depend primarily on the volumetric strain, whereas the magnetic ground state, exchange interactions, magnetocrystalline anisotropy, and ordering temperature show pronounced directional and composition-dependent responses. We also observe strain-induced competition between the phases, with MnBi_2Se_4, and MnSb_2Se_4 monolayers exhibiting a more diverse range of competing magnetic states, while MnSb_2Te_4 monolayer remains ferromagnetic over a larger portion of strain space. MnSb_2Te_4 also exhibits a substantially larger out-of-plane magnetocrystalline anisotropy, while showing a weaker dependence on strain than the Se-based materials. The calculated magnetic ordering temperature maps further highlight the role of two-dimensional strain to tune thermal magnetic stability in these materials. These results establish magnetoelastic trends across this family of Mn-based chalcogenide monolayers.
ER  -