Gate-driven Switching Dynamics in a Fully Suspended Superconducting Nanowire
Abstract
A gate voltage can suppress the critical current of a superconducting nanowire, and various scenarios have been proposed to describe these observations. The key difficulty is that these scenarios, including both leakage-driven and field-driven mechanisms, are impossible to disentangle in standard experiments. Here, we resolve this issue by studying a fully suspended superconducting nanowire of amorphous MoGe, separated from the gate by vacuum, eliminating all leakage-driven channels. We measure the phase slip escape rate Γ and find a large gate-induced enhancement of Γ, exponential over six orders of magnitude. Fitting various escape-rate models reveals a strong deviation from simple phase slip models, hinting at a complex interaction between the electrostatic field and the phase slip centers. Surprisingly, Γ is not invariant under reversal of the gate-voltage polarity. Our work establishes a clear and nontrivial connection between gate voltage and Γ, guiding future research into the origins of the effect.
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BibTeX
@misc{rog2026gatedriven,
title = {{Gate-driven Switching Dynamics in a Fully Suspended Superconducting Nanowire}},
author = {Matthijs Rog and Giacomo Trupiano and Filippo Antola and Mario Cuoco and Giorgio De Simoni and Kaveh Lahabi and Francesco Giazotto},
howpublished = {arXiv},
year = {2026},
month = oct,
doi = {10.48550/arxiv.2610.09806},
eprint = {2610.09806},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2610.09806},
}
RIS
TY - UNPB
TI - Gate-driven Switching Dynamics in a Fully Suspended Superconducting Nanowire
AU - Matthijs Rog
AU - Giacomo Trupiano
AU - Filippo Antola
AU - Mario Cuoco
AU - Giorgio De Simoni
AU - Kaveh Lahabi
AU - Francesco Giazotto
PY - 2026
DA - 2026/10/07
PB - arXiv
DO - 10.48550/arxiv.2610.09806
UR - https://arxiv.org/abs/2610.09806
AB - A gate voltage can suppress the critical current of a superconducting nanowire, and various scenarios have been proposed to describe these observations. The key difficulty is that these scenarios, including both leakage-driven and field-driven mechanisms, are impossible to disentangle in standard experiments. Here, we resolve this issue by studying a fully suspended superconducting nanowire of amorphous MoGe, separated from the gate by vacuum, eliminating all leakage-driven channels. We measure the phase slip escape rate Γ and find a large gate-induced enhancement of Γ, exponential over six orders of magnitude. Fitting various escape-rate models reveals a strong deviation from simple phase slip models, hinting at a complex interaction between the electrostatic field and the phase slip centers. Surprisingly, Γ is not invariant under reversal of the gate-voltage polarity. Our work establishes a clear and nontrivial connection between gate voltage and Γ, guiding future research into the origins of the effect.
ER -