Interplay between growth conditions and formation of localized light emitters in epitaxial AlN thin films
Abstract
AlN is a promising material for integrated quantum photonics due to its broad transparency window, its compatibility with CMOS technology, and the possibility to host localized light emitters acting as single photon sources. However, little is understood yet about the microscopic nature and formation mechanisms of these light emitters. In this contribution, we demonstrate that their formation efficiency depends significantly on the growth conditions of the AlN thin film. We reveal that localized light emitters with distinct zero-phonon lines in the 600--800~nm range can be efficiently formed in epitaxial AlN thin films grown under N-rich conditions by exposing the AlN to a post-growth treatment consisting in a proton irradiation followed by an annealing process. In contrast, the density of light emitters formed in AlN grown under Al-rich conditions remains low, even after the thin films have been exposed to the post-growth treatment. These results open a pathway toward a better understanding of the microscopic nature of these light emission centers, as well as their engineered integration as quantum light sources in AlN-based optomechanical platforms.
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BibTeX
@misc{saeedi2026interplay,
title = {{Interplay between growth conditions and formation of localized light emitters in epitaxial AlN thin films}},
author = {Meysam Saeedi and Duc V. Dinh and Andrey N. Anisimov and Mingyun Yuan and Georgy V. Astakhov and Alberto Hernández-Mínguez},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.12772},
eprint = {2609.12772},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.12772},
}
RIS
TY - UNPB
TI - Interplay between growth conditions and formation of localized light emitters in epitaxial AlN thin films
AU - Meysam Saeedi
AU - Duc V. Dinh
AU - Andrey N. Anisimov
AU - Mingyun Yuan
AU - Georgy V. Astakhov
AU - Alberto Hernández-Mínguez
PY - 2026
DA - 2026/09/11
PB - arXiv
DO - 10.48550/arxiv.2609.12772
UR - https://arxiv.org/abs/2609.12772
AB - AlN is a promising material for integrated quantum photonics due to its broad transparency window, its compatibility with CMOS technology, and the possibility to host localized light emitters acting as single photon sources. However, little is understood yet about the microscopic nature and formation mechanisms of these light emitters. In this contribution, we demonstrate that their formation efficiency depends significantly on the growth conditions of the AlN thin film. We reveal that localized light emitters with distinct zero-phonon lines in the 600--800~nm range can be efficiently formed in epitaxial AlN thin films grown under N-rich conditions by exposing the AlN to a post-growth treatment consisting in a proton irradiation followed by an annealing process. In contrast, the density of light emitters formed in AlN grown under Al-rich conditions remains low, even after the thin films have been exposed to the post-growth treatment. These results open a pathway toward a better understanding of the microscopic nature of these light emission centers, as well as their engineered integration as quantum light sources in AlN-based optomechanical platforms.
ER -