Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates
Abstract
Silicon-on-insulator technology is widely used to fabricate silicon based devices, from advanced transistors to photonic circuits or nanomechanical systems. Integrating low loss superconducting quantum circuits with silicon-on-insulator substrates enables to couple the advantages offered by the mature silicon technology to the exquisite sensitivity of superconducting circuits. The natural approach, inherited from research in superconducting microwave devices, is to use a substrate made with highly resistive silicon, known for its low level of microwave losses. In this work, using superconducting microwave resonators, we show that counterintuitively, standard resistivity silicon-on-insulator substrates perform better than high resistivity silicon-on-insulator substrates at cryogenic temperatures. In the latter case, the presence of a parasitic sheet conduction at the interface between bulk silicon and silicon oxide acts as the dominant loss mechanism. This parasitic sheet can be suppressed using substrates with intentionally induced traps. In such substrates, losses are ultimately limited by the dielectric losses of the silicon oxide layer. These substrates offer interesting perspectives for the development of superconducting nanoelectromechanical systems. First, the release, i.e. the removal of the silicon oxide, could be limited to the moving parts, thereby maintaining the mechanical integrity of the rest of the device. Additionally, such structure would enhance heat evacuation into the bulk of the substrate which is an issue in current devices such as microwave-to-optics converters.
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BibTeX
@misc{messelot2026origins,
title = {{Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates}},
author = {Simon Messelot and Nicolas Aparicio and Kazi Rafsanjani Amin and Eric Eyraud and Bruno Fain and Mikaël Cassé and Guillaume Jourdan and Fabrice Nemouchi and Sébastien Hentz and Frédéric Gustavo and François Lefloch and Nicolas Roch and Jérémie J Viennot and Julien Renard},
howpublished = {HAL},
year = {2026},
month = sep,
eprint = {2607.29154},
archivePrefix = {arXiv},
url = {https://hal.science/hal-05763155v1},
note = {CC BY-NC-SA 4.0},
}
RIS
TY - UNPB
TI - Origins of microwave losses in superconducting circuits made with silicon-on-insulator substrates
AU - Simon Messelot
AU - Nicolas Aparicio
AU - Kazi Rafsanjani Amin
AU - Eric Eyraud
AU - Bruno Fain
AU - Mikaël Cassé
AU - Guillaume Jourdan
AU - Fabrice Nemouchi
AU - Sébastien Hentz
AU - Frédéric Gustavo
AU - François Lefloch
AU - Nicolas Roch
AU - Jérémie J Viennot
AU - Julien Renard
PY - 2026
DA - 2026/09/24
PB - HAL
UR - https://hal.science/hal-05763155v1
AB - Silicon-on-insulator technology is widely used to fabricate silicon based devices, from advanced transistors to photonic circuits or nanomechanical systems. Integrating low loss superconducting quantum circuits with silicon-on-insulator substrates enables to couple the advantages offered by the mature silicon technology to the exquisite sensitivity of superconducting circuits. The natural approach, inherited from research in superconducting microwave devices, is to use a substrate made with highly resistive silicon, known for its low level of microwave losses. In this work, using superconducting microwave resonators, we show that counterintuitively, standard resistivity silicon-on-insulator substrates perform better than high resistivity silicon-on-insulator substrates at cryogenic temperatures. In the latter case, the presence of a parasitic sheet conduction at the interface between bulk silicon and silicon oxide acts as the dominant loss mechanism. This parasitic sheet can be suppressed using substrates with intentionally induced traps. In such substrates, losses are ultimately limited by the dielectric losses of the silicon oxide layer. These substrates offer interesting perspectives for the development of superconducting nanoelectromechanical systems. First, the release, i.e. the removal of the silicon oxide, could be limited to the moving parts, thereby maintaining the mechanical integrity of the rest of the device. Additionally, such structure would enhance heat evacuation into the bulk of the substrate which is an issue in current devices such as microwave-to-optics converters.
ER -