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PreprintarXiv licencearXiv

Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium

  • Alexei Orekhov
  • Wonjin Jang
  • Pan Zhang
  • Konstantinos Tsoukalas
  • Fabian Oppliger
  • Franco De Palma
  • Elena Acinapura
  • Younghun Ryu
  • Inga Seidler
  • Lisa Sommer
  • Leonardo Massai
  • Felix J. Schupp
4 more authors
  • Matthias Mergenthaler
  • Stefano Bosco
  • Patrick Harvey-Collard
  • Pasquale Scarlino
Open at sourcePDFDOICite

Abstract

Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf drive power at the low magnetic fields that are favorable for qubit coherence and readout. In planar Ge hole spin qubits, this can reach -27 dBm at the device, posing challenges for scalable architectures due to heating and crosstalk. Here, we demonstrate a flopping-mode (FM) qubit in Ge, where a single spin is delocalized in a double QD, combining first-order protection against charge noise with exceptionally efficient electric driving. By mapping out coherence sweet-spots as a function of magnetic field orientation we achieve T2*= 1.4μs, T2Hahn= 11.5 μs, Tϕ, CPMG322= 130 μs, and T1= 226 μs, and a single-qubit gate fidelity of up to 99.76% for a gate time tXπ = 88 ns. Importantly, these results are obtained at a nearly in-plane magnetic field of 5 mT using only -52 dBm drive power at the device. We further find that qubit relaxation in this regime is consistent with a two-photon Orbach process, providing a route for further optimization. Our results demonstrate that FM-EDSR supports ultra-low-power, high-fidelity single-qubit operations, improvements that could benefit scalable hole-spin-based architectures and hybrid spin-photon interfaces.

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Cite

BibTeXRIS
BibTeX
@misc{orekhov2026coherent,
  title = {{Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium}},
  author = {Alexei Orekhov and Wonjin Jang and Pan Zhang and Konstantinos Tsoukalas and Fabian Oppliger and Franco De Palma and Elena Acinapura and Younghun Ryu and Inga Seidler and Lisa Sommer and Leonardo Massai and Felix J. Schupp and Matthias Mergenthaler and Stefano Bosco and Patrick Harvey-Collard and Pasquale Scarlino},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.20775},
  eprint = {2609.20775},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.20775},
}
RIS
TY  - UNPB
TI  - Coherent and ultra-low-power EDSR with a flopping-mode spin qubit in germanium
AU  - Alexei Orekhov
AU  - Wonjin Jang
AU  - Pan Zhang
AU  - Konstantinos Tsoukalas
AU  - Fabian Oppliger
AU  - Franco De Palma
AU  - Elena Acinapura
AU  - Younghun Ryu
AU  - Inga Seidler
AU  - Lisa Sommer
AU  - Leonardo Massai
AU  - Felix J. Schupp
AU  - Matthias Mergenthaler
AU  - Stefano Bosco
AU  - Patrick Harvey-Collard
AU  - Pasquale Scarlino
PY  - 2026
DA  - 2026/09/17
PB  - arXiv
DO  - 10.48550/arxiv.2609.20775
UR  - https://arxiv.org/abs/2609.20775
AB  - Hole spin qubits in semiconductor quantum dots (QDs) enable high-fidelity all-electric control, but conventional electric dipole spin resonance (EDSR) can require substantial rf drive power at the low magnetic fields that are favorable for qubit coherence and readout. In planar Ge hole spin qubits, this can reach -27 dBm at the device, posing challenges for scalable architectures due to heating and crosstalk. Here, we demonstrate a flopping-mode (FM) qubit in Ge, where a single spin is delocalized in a double QD, combining first-order protection against charge noise with exceptionally efficient electric driving. By mapping out coherence sweet-spots as a function of magnetic field orientation we achieve T_2^*= 1.4μs, T_2^Hahn= 11.5 μs, T^ϕ, CPMG32_2= 130 μs, and T_1= 226 μs, and a single-qubit gate fidelity of up to 99.76% for a gate time t_Xπ = 88 ns. Importantly, these results are obtained at a nearly in-plane magnetic field of 5 mT using only -52 dBm drive power at the device. We further find that qubit relaxation in this regime is consistent with a two-photon Orbach process, providing a route for further optimization. Our results demonstrate that FM-EDSR supports ultra-low-power, high-fidelity single-qubit operations, improvements that could benefit scalable hole-spin-based architectures and hybrid spin-photon interfaces.
ER  -