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Peer-reviewedCC BY 4.0Nanomaterials

The Influence Law and Etching Verification of Sub-Wavelength Longitudinal Field Generation

  • Ji Wang1,2,3
  • Kaiwen Ding1,3
  • Wei Guo1,3
  • Lin Li1,2,3
  1. 1Research Center for Laser Extreme Manufacturing, Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  2. 2Ningbo College of Materials Technology & Engineering, University of Chinese Academy of Sciences, Ningbo 315201, China
  3. 3Zhejiang Key Laboratory of Laser Extreme Manufacturing for Difficult-to-Machine Materials, Ningbo Institute of Materials Technology & Engineering, Ningbo 315201, China
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Abstract

The generation of sub-diffraction-limit focal spots is essential for nanoscale manufacturing, and tight focusing of radially polarized beams provides a promising route to achieve this goal through the longitudinal field. This work proposes an annular-modulation-enhanced focusing method that combines numerical aperture (NA) optimization, annular ring width control, and Bessel–Gaussian beam parameter tuning to enhance the longitudinal field and compress the focal spot. The method selectively transmits high-angle components that contribute dominantly to the longitudinal field, while filtering out low-angle components that broaden the focal spot. The physical boundary of the effective regulation window was identified through parameter space mapping. By optimizing the parameters, the simulated longitudinal field content exceeded 85%, and the focal spot size was reduced below a 0.2 wavelength (λ). Moreover, under far-field conditions, etching was performed on single-crystal silicon to achieve a straight line with a width of approximately 254 nm, corresponding to approximately λ/4. These results indicate that Bessel–Gaussian beam annular modulation can not only achieve sub-wavelength spots but also has excellent potential in the field of nanomanufacturing.

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Cite

BibTeXRIS
BibTeX
@article{wang2026influence,
  title = {{The Influence Law and Etching Verification of Sub-Wavelength Longitudinal Field Generation}},
  author = {Ji Wang and Kaiwen Ding and Wei Guo and Lin Li},
  journal = {Nanomaterials},
  year = {2026},
  month = oct,
  doi = {10.3390/nano16201300},
  url = {https://www.mdpi.com/2079-4991/16/20/1300},
  note = {CC BY 4.0},
}
RIS
TY  - JOUR
TI  - The Influence Law and Etching Verification of Sub-Wavelength Longitudinal Field Generation
AU  - Ji Wang
AU  - Kaiwen Ding
AU  - Wei Guo
AU  - Lin Li
PY  - 2026
DA  - 2026/10/01
JO  - Nanomaterials
DO  - 10.3390/nano16201300
UR  - https://www.mdpi.com/2079-4991/16/20/1300
AB  - The generation of sub-diffraction-limit focal spots is essential for nanoscale manufacturing, and tight focusing of radially polarized beams provides a promising route to achieve this goal through the longitudinal field. This work proposes an annular-modulation-enhanced focusing method that combines numerical aperture (NA) optimization, annular ring width control, and Bessel–Gaussian beam parameter tuning to enhance the longitudinal field and compress the focal spot. The method selectively transmits high-angle components that contribute dominantly to the longitudinal field, while filtering out low-angle components that broaden the focal spot. The physical boundary of the effective regulation window was identified through parameter space mapping. By optimizing the parameters, the simulated longitudinal field content exceeded 85%, and the focal spot size was reduced below a 0.2 wavelength (λ). Moreover, under far-field conditions, etching was performed on single-crystal silicon to achieve a straight line with a width of approximately 254 nm, corresponding to approximately λ/4. These results indicate that Bessel–Gaussian beam annular modulation can not only achieve sub-wavelength spots but also has excellent potential in the field of nanomanufacturing.
SN  - 2079-4991
ER  -