Thermal response of an in-situ STEM MEMS chip under rapid pulse heating
Abstract
In-situ rapid solidification studies demand measurements of thermal histories with high temporal resolution. We present a simple, effective setup to quantify the cooling response of an uncoated commercial Protochips Fusion MEMS chip in an in-situ scanning transmission electron microscopy (STEM) context. We drive user-defined temperature programs via an arbitrary waveform generator (AWG), while recording the voltage drops across a series shunt to reconstruct chip resistance and temperature at sub-millisecond resolution. We confirm the response times inferred from the current; however, the temperature obtained from the physically linked resistance, T(R), evolves more slowly. Analysis of the maximum cooling step reveals an exponential-like relaxation with time constant τ=1.80 ms, consistent with reported thermal lag constants for fast scanning calorimetry. From the time to reach 95% of the temperature difference ΔT, we measure an average cooling rate of ≈ 7.9× 104 K/s. Robustness checks include repeated R(T) measurements (revealing a modest downward drift approaching an asymptote), a 10 kΩ test load, and characterization of small off-duty arbitrary waveform generator leakage/offsets. These findings define practical bounds on achievable thermal-path rates when planning in-situ electron microscopy experiments with this chip platform.
Related
- Transverse Numerical Approach Combining Fluid-Structure Interaction and Model Reduction Methods of a Modular Thermal Energy Storage System to Improve the Energy Efficiency of District Heating Networks
- Bayesian greedy receiver for pulse position modulation without an error floor under thermal noise
- Anisotropic Maxwell neural operator for rapid parametric full-wave modelling of ion cyclotron resonance heating
- Geometry and cooling effects on an induction self-heating insert for rapid mold temperature control: Experimental, Multiphysics, and artificial neural network-based analysis
- First-Principles-Informed Modeling of Thermal Transport and Laser-Induced Heating in Ultrahigh-Temperature Carbides
BibTeX
@misc{dumitraschkewitz2026thermal,
title = {{Thermal response of an in-situ STEM MEMS chip under rapid pulse heating}},
author = {Phillip Dumitraschkewitz and Thomas Kremmer},
howpublished = {arXiv},
year = {2026},
month = sep,
doi = {10.48550/arxiv.2609.08473},
eprint = {2609.08473},
archivePrefix = {arXiv},
url = {https://arxiv.org/abs/2609.08473},
note = {CC BY 4.0},
}
RIS
TY - UNPB
TI - Thermal response of an in-situ STEM MEMS chip under rapid pulse heating
AU - Phillip Dumitraschkewitz
AU - Thomas Kremmer
PY - 2026
DA - 2026/09/08
PB - arXiv
DO - 10.48550/arxiv.2609.08473
UR - https://arxiv.org/abs/2609.08473
AB - In-situ rapid solidification studies demand measurements of thermal histories with high temporal resolution. We present a simple, effective setup to quantify the cooling response of an uncoated commercial Protochips Fusion MEMS chip in an in-situ scanning transmission electron microscopy (STEM) context. We drive user-defined temperature programs via an arbitrary waveform generator (AWG), while recording the voltage drops across a series shunt to reconstruct chip resistance and temperature at sub-millisecond resolution. We confirm the response times inferred from the current; however, the temperature obtained from the physically linked resistance, T(R), evolves more slowly. Analysis of the maximum cooling step reveals an exponential-like relaxation with time constant τ=1.80 ms, consistent with reported thermal lag constants for fast scanning calorimetry. From the time to reach 95% of the temperature difference ΔT, we measure an average cooling rate of ≈ 7.9× 10^4 K/s. Robustness checks include repeated R(T) measurements (revealing a modest downward drift approaching an asymptote), a 10 kΩ test load, and characterization of small off-duty arbitrary waveform generator leakage/offsets. These findings define practical bounds on achievable thermal-path rates when planning in-situ electron microscopy experiments with this chip platform.
ER -