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PreprintarXiv licencearXiv

Intrinsic (valley) thermal Hall conductivity of phonons in graphene for integer quantum Hall phases

  • M. Selch
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Abstract

We calculate the intrinsic contribution to the (valley) thermal Hall conductivity of phonons in (Semenoff-gapped) graphene in the quantum Hall regime where bulk electron thermal transport is suppressed. The (valley) thermal Hall transport of phonons considered here originates from a phonon (valley) Hall viscosity induced by electron (valley) Hall conductivity and viscosity via geometric electron-phonon coupling. The so generated phonon (valley) Hall viscosity is identified with the emergent (valley) Hall viscosity recently introduced in \textit{Phys. Lett. A} \textbf{595}, 132096 (2026). While our calculations refer to graphene, they may very well be generalized to other Dirac materials like group-VI transition metal dichalcogenides. We discuss the prospect of measuring the phonon thermal Hall conductivity in graphene-based heterostructures and estimate the corresponding valley response induced by electrons in the inversion symmetry broken phase.

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Cite

BibTeXRIS
BibTeX
@misc{selch2026intrinsic,
  title = {{Intrinsic (valley) thermal Hall conductivity of phonons in graphene for integer quantum Hall phases}},
  author = {M. Selch},
  howpublished = {arXiv},
  year = {2026},
  month = sep,
  doi = {10.48550/arxiv.2609.09505},
  eprint = {2609.09505},
  archivePrefix = {arXiv},
  url = {https://arxiv.org/abs/2609.09505},
}
RIS
TY  - UNPB
TI  - Intrinsic (valley) thermal Hall conductivity of phonons in graphene for integer quantum Hall phases
AU  - M. Selch
PY  - 2026
DA  - 2026/09/08
PB  - arXiv
DO  - 10.48550/arxiv.2609.09505
UR  - https://arxiv.org/abs/2609.09505
AB  - We calculate the intrinsic contribution to the (valley) thermal Hall conductivity of phonons in (Semenoff-gapped) graphene in the quantum Hall regime where bulk electron thermal transport is suppressed. The (valley) thermal Hall transport of phonons considered here originates from a phonon (valley) Hall viscosity induced by electron (valley) Hall conductivity and viscosity via geometric electron-phonon coupling. The so generated phonon (valley) Hall viscosity is identified with the emergent (valley) Hall viscosity recently introduced in \textit{Phys. Lett. A} \textbf{595}, 132096 (2026). While our calculations refer to graphene, they may very well be generalized to other Dirac materials like group-VI transition metal dichalcogenides. We discuss the prospect of measuring the phonon thermal Hall conductivity in graphene-based heterostructures and estimate the corresponding valley response induced by electrons in the inversion symmetry broken phase.
ER  -