Formation of Light‐Emitting Defects in Ag‐Based Memristors

Abstract

Optical memristors are innovative devices that enable the integration of electro‐optical functionalities—such as light modulation, multilevel optical memory, and nonvolatile reprogramming—into neuromorphic networks. Recently, their capabilities have expanded with the development of light‐emitting memristors, which operate through various emission mechanisms. One notable process involves the electroluminescence of defects generated within the switching matrix during device activation. In this study, we explore the early‐stage formation and evolution of the species responsible for light emission in Ag‐based in‐plane memristors. Our approach combines electrical stimulation with correlated optical electroluminescence and photoluminescence measurements. The findings provide valuable insights into controlling emission processes in memristors, paving the way for their integration as essential light‐emitting components in neuromorphic circuits.

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BibTeX RIS

BibTeX

@article{singh2026formation,
  title = {{Formation of Light‐Emitting Defects in Ag‐Based Memristors}},
  author = {Diana Singh and Maciej Ćwierzona and Régis Parvaud and Sebastian Maćkowski and Alexandre Bouhelier},
  journal = {Advanced Electronic Materials},
  year = {2026},
  month = oct,
  doi = {10.1002/aelm.70478},
  eprint = {2511.21555},
  archivePrefix = {arXiv},
  url = {https://hal.science/hal-05830429v1},
  note = {CC BY 4.0},
}

RIS

TY  - JOUR
TI  - Formation of Light‐Emitting Defects in Ag‐Based Memristors
AU  - Diana Singh
AU  - Maciej Ćwierzona
AU  - Régis Parvaud
AU  - Sebastian Maćkowski
AU  - Alexandre Bouhelier
PY  - 2026
DA  - 2026/10/23
JO  - Advanced Electronic Materials
DO  - 10.1002/aelm.70478
UR  - https://hal.science/hal-05830429v1
AB  - Optical memristors are innovative devices that enable the integration of electro‐optical functionalities—such as light modulation, multilevel optical memory, and nonvolatile reprogramming—into neuromorphic networks. Recently, their capabilities have expanded with the development of light‐emitting memristors, which operate through various emission mechanisms. One notable process involves the electroluminescence of defects generated within the switching matrix during device activation. In this study, we explore the early‐stage formation and evolution of the species responsible for light emission in Ag‐based in‐plane memristors. Our approach combines electrical stimulation with correlated optical electroluminescence and photoluminescence measurements. The findings provide valuable insights into controlling emission processes in memristors, paving the way for their integration as essential light‐emitting components in neuromorphic circuits.
SN  - 2199-160X
SN  - 2199-160X
ER  -

Abstract

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